Document
Si2305DS
Vishay Siliconix
P-Channel 1.25-W, 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
–8 8
rDS(on) (W)
0.052 @ VGS = –4.5 V 0.071 @ VGS = –2.5 V 0.108 @ VGS = –1.8 V
ID (A)
"3.5 "3 "2
TO-236 (SOT-23)
G 1 3 S 2 D
Top View Si2305DS (A5)* *Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipation)a, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
Limit
–8 "8 "3.5 "2.8 "12 –1.6 1.25 0.8 –55 to 150
Unit
V
A
W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta t v 5 sec Steady State Notes a. Surface Mounted on FR4 Board. b. t v5 sec. Document Number: 70833 S-56947—Rev. C, 28-Dec-98 www.vishay.com S FaxBack 408-970-5600
Symbol
RthJA
Typical
Maximum
100
Unit
_C/W
130
2-1
Si2305DS
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Limits Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = –10 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "8 V VDS = –6.4 V, VGS = 0 V VDS = –6.4 V, VGS = 0 V, TJ = 55_C VDS v –5 V, VGS = –4.5 V VDS v –5 V, VGS = –2.5 V VGS = –4.5 V, ID = –3.5 A
a D i S Drain-Source On-Resistance O R i
Symbol
Test Conditions
Min
Typ
Max
Unit
–8 V –0.45 "100 –1 –10 –6 A –3 0.044 0.060 0.087 8.5 –1.2 0.052 0.071 0.108 S V W nA mA
On-State Drain Currenta
ID(on)
rDS(on)
VGS = –2.5 V, ID = –3 A VGS = –1.8 V, ID = –2 A
Forward
Transconductancea
gfs VSD
VDS = –5 V, ID = –3.5 A IS = –1.6 A, VGS = 0 V
Diode Forward Voltage
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss 4V 0 f = 1 MHz MH VDS = –4 V, VGS = 0, VDS = –4 4V V, VGS = –4.5 45V ID ^ –3.5 3.5 A 10 2 2 1245 375 210 F pF 15 nC C
Switchingb
Turn-On Time td(on) tr Turn-Off Time td(off) tf Notes a. b. c. For DESIGN AID ONLY, not subject to production testing. Pulse test: PW v300 ms duty cycle v2%. Switching time is essentially independent of operating temperature. VDD = –4 4 V V, RL = 4 W ID ^ –1.0 A, VGEN = –4.5 V RG = 6 W 13 25 55 19 20 40 ns 80 35
www.vishay.com S FaxBack 408-970-5600
2-2
Document Number: 70833 S-56947—Rev. C, 28-Dec-98
Si2305DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
12 VGS = 4.5 thru 2.5 V 10 2V 12 TC = –55_C 10 25_C I D – Drain Current (A) 8 I D – Drain Current (A) 8 125_C 6
Transfer Characteristics
6 1.5 V
4
4
2 1, 0.5 V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
2
0 0 0.5 1.0 1.5 2.0 2.5
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.30 2000
Capacitance
r DS(on) – On-Resistance ( W )
0.25 C – Capacitance (p.