SI2301BDS

P-Channel 2.5 V (G-S) MOSFET Si2301BDS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () - 20 0.100 at VGS = - 4.5 V 0.150 at VGS = - 2.5 V ID (A)b - 2.4 - 2.0 TO-236 (SOT-23) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC G1 S2 3D Top View Si2301 BDS (L1)* * Marking Code Ordering Information: Si2301BDS-T1-E3 (Lead (Pb)-free) Si2301BDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 5 s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)b TA = 25 °C TA = 70 °C ID - 2.4 - 1.9 - 2.2 - 1.8 Pulsed Drain Currenta IDM - 10 Continuous Source Current (Diode Conduction)b IS - 0.72 - 0.6 Power Dissipationb TA = 25 °C TA = 70 °C PD 0.9 0.57 0.7 0.45 Operating Junction and Storage Temperature Range TJ, Tstg - 55 t...