SI1902DL

Dual N-Channel 20 V (D-S) MOSFET Si1902DL Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.385 at VGS = 4.5 V 20 0.630 at VGS = 2.5 V ID (A) 0.70 0.54 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETs: 2.5 V Rated 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SOT-363 SC-70 (6-LEADS) S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 MarakrinkginCogdeC o d e YYYY PAA X Loot TtrTaceability and Date Code Part # Code Top View Ordering Information: Si1902DL-T1-E3 (Lead (Pb)-free with Tape and Reel) Si1902DL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 5s Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C ID 0.70 0.50 0.66 0.48 Pulsed Drain Current IDM 1 Continuous Source Current (Diode Conduction)a IS 0.25 0.23 Maximum Power Dissipationa TA = 25 °C TA = 85 °C PD 0.30 0.16 0.27 0.14 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t 5 s Steady State Maximum Junction-to-Foot (Drain) Steady State Notes: a. Surface Mounted on 1" x 1" FR4 board. Symbol RthJA RthJF Typical 360 400 300 Maximum 415 460 350 Unit °C/W Document Number: 71080 www.vishay.com S11-2043-Rev. J, 17-Oct-11 1 This document is subject to change without notice. T...