Si1555DL
Vishay Siliconix
Complementary Low-Threshold MOSFET Pair
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
N-Channel
20
0.385 at VGS = 4.5 V 0.630 at VGS = 2.5 V
0.600 at VGS = - 4.5 V
P-Channel
-8
0.850 at VGS = - 2.5 V
1.200 at VGS = - 1.8 V
ID (A) 0.70 0.54 - 0.60 - 0.50 - 0.42
FEATURES • TrenchFET® Power MOSFET
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
SOT-363 SC-70 (6-LEADS)
S1 1 G1 2 D2 3
6 D1 5 G2 4 S2
Top View
Marking Code
YY
RB XX
Lot Traceability and Date Code
Part # Code
Ordering Information: Si1555DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
N-Channel
P-Channel
Parameter
Symbol
5 s Steady State 5 s Steady State
Drain-Source Voltage
VDS 20
-8
Gate-Source Voltage
VGS
± 12
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 85 °C
ID
± 0.70 ± 0.50
± 0.66 ± 0.48
- 0.60 - 0.43
- 0.57 - 0.41
Pulsed Drain Current
IDM ± 1
Continuous Source Current (Diode Conduction)a
IS
0.25
0.23
- 0.25
- 0.23
Maximum Power Dissipationa
TA = 25 °C TA = 85 °C
PD
0.30 0.16
0.27 0.14
0.30 0.16
0.27 0.14
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t5s Steady State
Maximum Junction-to-Foot (Drain)
Steady State
Note: a. Surface mounted on 1" x 1" FR4 board.
Symbol RthJA RthJF
Typical 360 400 300
Maximum 415 460 350
Unit °C/W
Document Number: 71079
For technical questions, contact:
[email protected]
www.vishay.com
S13-0631-Rev. F, 25-Mar-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1555DL
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 12 V VDS = 0 V, VGS = ± 8 V
VDS = 20 V, VGS = 0 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 8 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 85 °C
VDS = - 8 V, VGS = 0 V, TJ = 85 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 4.5 V VDS - 5 V, VGS = - 4.5 V
VGS = 4.5 V, ID = 0.66 A
VGS = - 4.5 V, ID = - 0.57 A
Drain-Source On-State Resistancea
RDS(on)
VGS = 2.5 V, ID = 0.40 A
VGS = - 2.5 V, ID = - 0.48 A
VGS = - 1.8 V, ID = - 0.20 A
Forward Transconductancea
gfs
VDS = 10 V, ID = 0.66 A VDS = - 4 V, ID = - 0.57 A
Diode Forward Voltagea
VSD
IS = 0.23 A, VGS = 0 V IS = - 0.23 A, VGS = 0 V
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 0.66 A Qgs
P-Channel Qgd VDS = - 4 V, VGS = - 4.5 V, ID = - 0.57 A
Turn-On Delay Time Rise Time
td(on) tr
N-Channel VDD = 10 V, RL = 20 ID 0.5 A, VGEN = 4.5 V, Rg = 6
Turn-Off Delay Time Fall Time
td(off) tf
P-Channel VDD = - 4 V, RL = 8 ID - 0.5 A, VGEN = - 4.5 V, Rg = 6
Source-Drain Reverse Recovery Time
trr
IF = 0.23 A, dI/dt = 100 A/µs IF = - 0.23 A, dI/dt = 100 A/µs
Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing.
N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch P-Ch N-Ch P-Ch N-Ch P-Ch
N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch
Min. 0.6 - 0.45
1 -1
Typ.
0.320 0.510 0.560 0.720 1.000
1.5 1.2 0.8 - 0.8
0.8 1.5 0.06 0.17 0.30 0.16 10 6 16 25 10 10 10 10 20 20
Max. Unit
1.4 -1 ± 100 ± 100 1 -1 5 -5
0.385 0.600 0.630 0.850 1.200
1.2 - 1.2
V nA µA A
S V
1.2 2.3
nC
20 12 30 50 20 20 ns 20 20
40
40
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
www.vishay.com
For technical questions, contact:
[email protected]
Document Number: 71079
2 S13-0631-Rev. F, 25-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1.0 VGS = 5 V thru 2.5 V
0.8
2V 0.6
1.0 0.8 0.6
Si1555DL
Vishay Siliconix
ID - Drain Current (A)
ID - Drain Current (A)
0.4
0.2 0.0
0.0
1.0
1.5 V 1V
0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) Output Characteristics
0.4 0.2 0.0
0.0
100
TC = 125 °C
25 °C
- 55 °C
0.5 1.0 1.5 2.0
VGS - Gate-to-Source Voltage (V) Transfer Characteristics
2.5
C - Capacitan.