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SI1555DL Dataheets PDF



Part Number SI1555DL
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description MOSFET
Datasheet SI1555DL DatasheetSI1555DL Datasheet (PDF)

Si1555DL Vishay Siliconix Complementary Low-Threshold MOSFET Pair PRODUCT SUMMARY VDS (V) RDS(on) () N-Channel 20 0.385 at VGS = 4.5 V 0.630 at VGS = 2.5 V 0.600 at VGS = - 4.5 V P-Channel -8 0.850 at VGS = - 2.5 V 1.200 at VGS = - 1.8 V ID (A) 0.70 0.54 - 0.60 - 0.50 - 0.42 FEATURES • TrenchFET® Power MOSFET • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 SOT-363 SC-70 (6-LEADS) S1 1 G1 2 D2 3 6 D1 5 G2 4 S2 Top View Marking Code .

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Si1555DL Vishay Siliconix Complementary Low-Threshold MOSFET Pair PRODUCT SUMMARY VDS (V) RDS(on) () N-Channel 20 0.385 at VGS = 4.5 V 0.630 at VGS = 2.5 V 0.600 at VGS = - 4.5 V P-Channel -8 0.850 at VGS = - 2.5 V 1.200 at VGS = - 1.8 V ID (A) 0.70 0.54 - 0.60 - 0.50 - 0.42 FEATURES • TrenchFET® Power MOSFET • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 SOT-363 SC-70 (6-LEADS) S1 1 G1 2 D2 3 6 D1 5 G2 4 S2 Top View Marking Code YY RB XX Lot Traceability and Date Code Part # Code Ordering Information: Si1555DL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) N-Channel P-Channel Parameter Symbol 5 s Steady State 5 s Steady State Drain-Source Voltage VDS 20 -8 Gate-Source Voltage VGS ± 12 ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C ID ± 0.70 ± 0.50 ± 0.66 ± 0.48 - 0.60 - 0.43 - 0.57 - 0.41 Pulsed Drain Current IDM ± 1 Continuous Source Current (Diode Conduction)a IS 0.25 0.23 - 0.25 - 0.23 Maximum Power Dissipationa TA = 25 °C TA = 85 °C PD 0.30 0.16 0.27 0.14 0.30 0.16 0.27 0.14 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t5s Steady State Maximum Junction-to-Foot (Drain) Steady State Note: a. Surface mounted on 1" x 1" FR4 board. Symbol RthJA RthJF Typical 360 400 300 Maximum 415 460 350 Unit °C/W Document Number: 71079 For technical questions, contact: [email protected] www.vishay.com S13-0631-Rev. F, 25-Mar-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1555DL Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA VDS = VGS, ID = - 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V VDS = 0 V, VGS = ± 8 V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = - 8 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 85 °C VDS = - 8 V, VGS = 0 V, TJ = 85 °C On-State Drain Currenta ID(on) VDS 5 V, VGS = 4.5 V VDS - 5 V, VGS = - 4.5 V VGS = 4.5 V, ID = 0.66 A VGS = - 4.5 V, ID = - 0.57 A Drain-Source On-State Resistancea RDS(on) VGS = 2.5 V, ID = 0.40 A VGS = - 2.5 V, ID = - 0.48 A VGS = - 1.8 V, ID = - 0.20 A Forward Transconductancea gfs VDS = 10 V, ID = 0.66 A VDS = - 4 V, ID = - 0.57 A Diode Forward Voltagea VSD IS = 0.23 A, VGS = 0 V IS = - 0.23 A, VGS = 0 V Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg N-Channel VDS = 10 V, VGS = 4.5 V, ID = 0.66 A Qgs P-Channel Qgd VDS = - 4 V, VGS = - 4.5 V, ID = - 0.57 A Turn-On Delay Time Rise Time td(on) tr N-Channel VDD = 10 V, RL = 20  ID  0.5 A, VGEN = 4.5 V, Rg = 6  Turn-Off Delay Time Fall Time td(off) tf P-Channel VDD = - 4 V, RL = 8  ID  - 0.5 A, VGEN = - 4.5 V, Rg = 6  Source-Drain Reverse Recovery Time trr IF = 0.23 A, dI/dt = 100 A/µs IF = - 0.23 A, dI/dt = 100 A/µs Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. 0.6 - 0.45 1 -1 Typ. 0.320 0.510 0.560 0.720 1.000 1.5 1.2 0.8 - 0.8 0.8 1.5 0.06 0.17 0.30 0.16 10 6 16 25 10 10 10 10 20 20 Max. Unit 1.4 -1 ± 100 ± 100 1 -1 5 -5 0.385 0.600 0.630 0.850 1.200 1.2 - 1.2 V nA µA A  S V 1.2 2.3 nC 20 12 30 50 20 20 ns 20 20 40 40 Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: [email protected] Document Number: 71079 2 S13-0631-Rev. F, 25-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.0 VGS = 5 V thru 2.5 V 0.8 2V 0.6 1.0 0.8 0.6 Si1555DL Vishay Siliconix ID - Drain Current (A) ID - Drain Current (A) 0.4 0.2 0.0 0.0 1.0 1.5 V 1V 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) Output Characteristics 0.4 0.2 0.0 0.0 100 TC = 125 °C 25 °C - 55 °C 0.5 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 2.5 C - Capacitan.


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