SI1433DH

P-Channel 30 V (D-S) MOSFET Si1433DH Vishay Siliconix PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) 0.150 at VGS = - 10 V 0.260 at VGS = - 4.5 V ID (A) - 2.2 - 1.6 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETs: 1.8 V Rated Thermally Enhanced SC-70 Package Compliant to RoHS Directive 2002/95/EC SOT-363 SC-70 (6-LEADS) APPLICATIONS Load Switches - Notebook PC - Servers D1 6D D2 5D G3 4S Top View Marking Code YY BE XX Lot Traceability and Date Code Part # Code Ordering Information: Si1433DH-T1-E3 (Lead (Pb)-free) Si1433DH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 85 °C TA = 25 °C TA = 85 °C VDS VGS ID IDM IS PD TJ, Tstg - 30 ± 20 - 2.2 - 1.9 - 1.7 - 1.4 -8 - 1.4 - 0.9 1.45 0.95 0.75 0.5 - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface mounted on 1" x 1" FR4 board. t≤5s Steady State Steady State Symbol RthJA RthJF Document Number: 72323 S10-0935-Rev. C, 19-Apr-10 Typical 65 105 38 Maximum 85 130 48 Unit °C/W www.vishay.com 1 Si1433DH Vishay Siliconix SPECIFICATIONS TJ...