P-Channel MOSFET
P-Channel 30 V (D-S) MOSFET
Si1433DH
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) - 30
RDS(on) (Ω) 0.150 at VGS = - 10 V...
Description
P-Channel 30 V (D-S) MOSFET
Si1433DH
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) - 30
RDS(on) (Ω) 0.150 at VGS = - 10 V 0.260 at VGS = - 4.5 V
ID (A) - 2.2 - 1.6
FEATURES
Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power MOSFETs: 1.8 V Rated Thermally Enhanced SC-70 Package Compliant to RoHS Directive 2002/95/EC
SOT-363 SC-70 (6-LEADS)
APPLICATIONS
Load Switches - Notebook PC - Servers
D1
6D
D2
5D
G3
4S
Top View
Marking Code
YY
BE XX
Lot Traceability and Date Code
Part # Code
Ordering Information: Si1433DH-T1-E3 (Lead (Pb)-free) Si1433DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25 °C TA = 85 °C
TA = 25 °C TA = 85 °C
VDS VGS
ID
IDM IS
PD
TJ, Tstg
- 30
± 20
- 2.2
- 1.9
- 1.7
- 1.4
-8
- 1.4
- 0.9
1.45 0.95
0.75 0.5
- 55 to 150
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain) Notes: a. Surface mounted on 1" x 1" FR4 board.
t≤5s Steady State Steady State
Symbol RthJA RthJF
Document Number: 72323 S10-0935-Rev. C, 19-Apr-10
Typical 65 105 38
Maximum 85 130 48
Unit °C/W
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Si1433DH
Vishay Siliconix
SPECIFICATIONS TJ...
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