SI1023X

Dual P-Channel 20 V (D-S) MOSFET Si1023X Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 1.2 at VGS = - 4.5 V - 20 1.6 at VGS = - 2.5 V 2.7 at VGS = - 1.8 V ID (mA) - 350 - 300 - 150 SOT-563 SC-89 S1 1 G1 2 6 D1 5 G2 Marking Code: B D2 3 4 S2 Top View Ordering Information: Si1023X-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET: 1.8 V Rated Very Small Footprint High-Side Switching Low On-Resistance: 1.2  Low Threshold: 0.8 V (typ.) Fast Switching Speed: 14 ns 1.8 V Operation Gate-Source ESD Protected: 2000 V Compliant to RoHS Directive 2002/95/EC BENEFITS Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation APPLICATIONS Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±6 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C ID - 390 - 280 - 370 - 265 Pulsed Drain Currentb IDM - 650 Continuous Source Current (Diode Conduction)a IS - 450 - 380 Maximum Power Dissipationa TA = 25 °C TA = 85 °C PD 280 250 145 130 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 G...