SI1013R

P-Channel 1.8 V (G-S) MOSFET Si1013R/X Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 1.2 at VGS = - 4.5 V - 20 1.6 at VGS = - 2.5 V 2.7 at VGS = - 1.8 V ID (mA) - 350 - 300 - 150 SC-75A or SC-89 G1 S2 Top View 3D SC-75A (SOT-416): Si1013R - Marking Code D SC-89 (SOT-490): Si1013X - Marking Code B Ordering Information: Si1013R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free) Si1013X-T1-GE3 (SC-89, Lead (Pb)-free and Halogen-free) FEATURES Halogen-free According to IEC 61249-2-21 Definition High-Side Switching Low On-Resistance: 1.2  Low Threshold: 0.8 V (Typ.) Fast Switching Speed: 14 ns 1.8 V Operation TrenchFET® Power MOSFETs 2000 V ESD Protection Compliant to RoHS Directive 2002/95/EC APPLICATIONS Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers BENEFITS Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±6 Continuous Drain Current (TJ = 150 °C)b Pulsed Drain Currenta TA = 25 °C TA = 85 °C ID IDM - 400 - 300 - 1000 - 350 - 275 Continuous Source Current (Diode Conduction)b IS - 275 - 250 Maximum Power Dissipationb for SC-75 Maximum Power Dissipationb for SC-89 TA = 25...