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SGW15N60 Dataheets PDF



Part Number SGW15N60
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description Fast IGBT in NPT-technology
Datasheet SGW15N60 DatasheetSGW15N60 Datasheet (PDF)

SGP15N60, Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability SGB15N60 SGW15N60 C G E P-TO-220-3-1 (TO-220AB) P-TO-263-3-2 (D²-PAK) P-TO-247-3-1 (TO-263AB) (TO-247AC) • Complete product .

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SGP15N60, Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability SGB15N60 SGW15N60 C G E P-TO-220-3-1 (TO-220AB) P-TO-263-3-2 (D²-PAK) P-TO-247-3-1 (TO-263AB) (TO-247AC) • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SGP15N60 SGB15N60 SGW15N60 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 15 A, VCC = 50 V, RGE = 25 Ω , start at Tj = 25°C Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Tj , Tstg -55...+150 °C 1) VCE 600V IC 15A VCE(sat) 2.3V Tj 150°C Package TO-220AB TO-263AB TO-247AC Ordering Code Q67040-S4508 Q67041-A4711 Q67040-S4235 Symbol VCE IC Value 600 31 15 Unit V A ICpul s VGE EAS 62 62 ±20 85 V mJ tSC Ptot 10 139 µs W VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Jul-02 SGP15N60, Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient SMD version, device on PCB 1) SGB15N60 SGW15N60 Max. Value Unit Symbol Conditions RthJC RthJA RthJA TO-220AB TO-247AC TO-263AB 0.9 62 40 40 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µ A VCE(sat) V G E = 15 V , I C = 15 A T j =2 5 ° C T j =1 5 0 ° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 40 0 µ A , V C E = V G E V C E = 60 0 V, V G E = 0 V T j =2 5 ° C T j =1 5 0 ° C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 2) Symbol Conditions Value min. 600 1.7 3 3 Typ. 2 2.3 4 10.9 800 84 52 76 7 13 150 max. 2.4 2.8 5 Unit V µA 40 2000 100 960 101 62 99 A nC nH nA S pF IGES gfs Ciss Coss Crss QGate LE IC(SC) V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 15 A V C E = 25 V , V G E = 0V , f = 1 MH z V C C = 48 0 V, I C =1 5 A V G E = 15 V T O - 22 0A B T O - 24 7A C V G E = 15 V , t S C ≤ 10 µ s V C C ≤ 6 0 0 V, T j ≤ 15 0 ° C Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s. 1) 2 2 Jul-02 SGP15N60, Switching Characteristic, Inductive Load, at Tj=25 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =2 5 ° C , V C C = 40 0 V, I C = 1 5 A, V G E = 0/ 15 V , R G = 21 Ω , 1) L σ = 18 0 nH , 1) C σ = 25 0 pF Energy losses include “tail” and diode reverse recovery. Symbol Conditions SGB15N60 SGW15N60 Value min. typ. 32 23 234 46 0.30 0.27 0.57 max. 38 28 281 55 0.36 0.35 0.71 mJ Unit ns Switching Characteristic, Inductive Load, at Tj=150 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 ° C V C C = 40 0 V, I C = 1 5 A, 1) L σ =1 8 0n H, 1) C σ = 2 50 pF V G E = 0/ 15 V , R G = 21 Ω Energy losses include “tail” and diode reverse recovery. 31 23 261 54 0.45 0.41 0.86 38 28 313 65 0.54 0.53 1.07 mJ ns Symbol Conditions Value min. typ. max. Unit 1) Leakage inductance L σ an d Stray capacity C σ due to dynamic test circuit in Figure E. 3 Jul-02 SGP15N60, 80A 100A SGB15N60 SGW15N60 tp=5µs 15µs Ic 70A 60A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 10A 50µs 50A 40A 30A TC=110°C 20A 10A 0A 10Hz TC=80°C 200µs 1A 1ms Ic DC 0.1A 1V 10V 100V 1000V 100Hz 1kHz 10kHz 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 21Ω) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤ 150°C) 35A 140W 30A 120W 100W 80W 60W 40W 20W 0W 25°C IC, COLLECTOR CURRENT 50°C 75°C 100°C 125°C Ptot, POWER DISSIPATION 25A 20A 15A 10A 5A 0A 25°C 50°C 75°C 100°C 125°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C) TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≤ 15V, Tj.


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