Document
SGP15N60,
Fast IGBT in NPT-technology
• 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
SGB15N60 SGW15N60
C
G
E
P-TO-220-3-1 (TO-220AB)
P-TO-263-3-2 (D²-PAK) P-TO-247-3-1 (TO-263AB) (TO-247AC)
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SGP15N60 SGB15N60 SGW15N60 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 15 A, VCC = 50 V, RGE = 25 Ω , start at Tj = 25°C Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Tj , Tstg -55...+150 °C
1)
VCE 600V
IC 15A
VCE(sat) 2.3V
Tj 150°C
Package TO-220AB TO-263AB TO-247AC
Ordering Code Q67040-S4508 Q67041-A4711 Q67040-S4235
Symbol VCE IC
Value 600 31 15
Unit V A
ICpul s VGE EAS
62 62 ±20 85 V mJ
tSC Ptot
10 139
µs W
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Jul-02
SGP15N60,
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient SMD version, device on PCB
1)
SGB15N60 SGW15N60
Max. Value Unit
Symbol
Conditions
RthJC RthJA RthJA TO-220AB TO-247AC TO-263AB
0.9 62 40 40
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µ A VCE(sat) V G E = 15 V , I C = 15 A T j =2 5 ° C T j =1 5 0 ° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 40 0 µ A , V C E = V G E V C E = 60 0 V, V G E = 0 V T j =2 5 ° C T j =1 5 0 ° C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current
2)
Symbol
Conditions
Value min. 600 1.7 3 3 Typ. 2 2.3 4 10.9 800 84 52 76 7 13 150 max. 2.4 2.8 5
Unit
V
µA 40 2000 100 960 101 62 99 A nC nH nA S pF
IGES gfs Ciss Coss Crss QGate LE IC(SC)
V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 15 A V C E = 25 V , V G E = 0V , f = 1 MH z V C C = 48 0 V, I C =1 5 A V G E = 15 V T O - 22 0A B T O - 24 7A C V G E = 15 V , t S C ≤ 10 µ s V C C ≤ 6 0 0 V, T j ≤ 15 0 ° C
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s.
1) 2
2
Jul-02
SGP15N60,
Switching Characteristic, Inductive Load, at Tj=25 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =2 5 ° C , V C C = 40 0 V, I C = 1 5 A, V G E = 0/ 15 V , R G = 21 Ω , 1) L σ = 18 0 nH , 1) C σ = 25 0 pF Energy losses include “tail” and diode reverse recovery. Symbol Conditions
SGB15N60 SGW15N60
Value min. typ. 32 23 234 46 0.30 0.27 0.57 max. 38 28 281 55 0.36 0.35 0.71 mJ Unit
ns
Switching Characteristic, Inductive Load, at Tj=150 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 ° C V C C = 40 0 V, I C = 1 5 A, 1) L σ =1 8 0n H, 1) C σ = 2 50 pF V G E = 0/ 15 V , R G = 21 Ω Energy losses include “tail” and diode reverse recovery. 31 23 261 54 0.45 0.41 0.86 38 28 313 65 0.54 0.53 1.07 mJ ns Symbol Conditions Value min. typ. max. Unit
1)
Leakage inductance L σ an d Stray capacity C σ due to dynamic test circuit in Figure E. 3 Jul-02
SGP15N60,
80A
100A
SGB15N60 SGW15N60
tp=5µs 15µs
Ic
70A 60A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
10A 50µs
50A 40A 30A TC=110°C 20A 10A 0A 10Hz TC=80°C
200µs 1A 1ms
Ic
DC 0.1A 1V 10V 100V 1000V
100Hz
1kHz
10kHz
100kHz
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 21Ω)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤ 150°C)
35A
140W
30A
120W 100W 80W 60W 40W 20W 0W 25°C
IC, COLLECTOR CURRENT
50°C 75°C 100°C 125°C
Ptot, POWER DISSIPATION
25A 20A 15A 10A 5A 0A 25°C
50°C
75°C
100°C
125°C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≤ 15V, Tj.