SGP20N60HS

SGP20N60HS SGW20N60HS High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation Short circuit withstand time – 10 µs Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution High ruggedness, temperature stable behaviour Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V 600V IC 20 20 Eoff 240µJ 240µJ Tj 150°C 150°C Package TO220AB TO-247AC Ordering Code Q67040-S4498 Q67040-S4499 P-TO-220-3-1 (TO-220AB) P-TO-247-3-1 (TO-247AC) C G E Type SGP20N60HS SGW20N60HS Maximum Ratings Parameter Symbol VCE IC Value 600 36 20 Unit V A Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Avalanche energy single pulse IC = 20A, VCC=50V, RGE=25Ω start TJ=25°C Gate-emitter voltage static transient (tp<1µs, D<0.05) Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Time limited operating junction temperature for t < 150h Soldering temperature, 1.6mm (0.063 in.) from case for 10s 1) ICpul s EAS 80 80 115 mJ VGE tSC Ptot Tj , Tstg Tj(tl) - ±20 ±30 10 178 -55...+150 175 260 V µs W °C VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev.2 Aug-02 Power Semicon...