SGM2013N
GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office.
Descrip...
SGM2013N
GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office.
Description The SGM2013N is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including cellular/cordless phone. Features Ultra-small package Low voltage operation Low noise NF = 1.4dB (Typ) at 900MHz, NF = 1.7dB (Typ) at 1.5GHz High gain Ga = 18dB (Typ) at 900MHz, Ga = 16dB (Typ) at 1.5GHz High stability Built-in gate protection diode Application UHF-band high-frequency amplifier and mixer Structure GaAs, N-channel, dual-gate metal semiconductor field-effect
transistor Absolute Maximum Ratings (Ta = 25°C) Drain to source voltage VDSX 6 Gate 1 to source voltage VG1S –4 Gate 2 to source voltage VG2S –4 Drain current ID 18 Allowable power dissipation PD 100 Channel temperature Tch 125 Storage temperature Tstg –55 to +150 M-281
V V V mA mW °C °C
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E97144-PS
SGM2013N
Electrical Characteristics Item Gate 1 to source current Symbol IG1SS Conditions VG1S = –3V VG2S = 0V VDS = 0V VG...