SGL-0163

Product Description Stanford Microdevices’ SGL-0163 is a high performance cascadeable 50-ohm low noise amplifier designed for operation at voltages as low as 2.5V. The SGL-0163 can be operated at 3V for low power or 4V for medium power applications. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. Internally matched to 50 Ohm impedance, the SGL-0163 requires only an RF choke, DC blocking and bypass capacitors for external components. This device has an internal temperature compensation circuit and can be operated directly from 3-4V supply. Small Signal Gain vs. Frequency 20 15 Preliminary Preliminary SGL-0163 800-1000 MHz Low Noise Amplifier 50 Ohm, Silicon Germanium 10 5 0 800 850 900 950 1000 3V,11mA 4V,25mA Product Features • Low Noise Figure • High Input Intercept • Internal Temp. Compensation Circuit • Internally Matched to 50 W • Unconditionally Stable • Low Power Consumption • Single Voltage Supply • Small Package: SOT-363 Applications • Receivers • Cellular, Fixed Wireless, Land Mobile U nits V cc = 3V Min. V cc = 3V Ty p. 5.0 6.4 13.5 15.0 1.1 1.8:1 1.7:1 20.6 8.0 11.0 255 14.0 16.5 V cc = 3V Max. V cc = 4V Ty p. 11.0 11.8 15.7 1.5 1.5:1 1.6:1 20.7 25.0 255 dB Frequency MHz Sy mbol P 1dB IIP3 S 21 NF S 12 ID Rth, j-l Parameters: Test C onditions: Z0 = 50 Ohms, T = 25ºC Output Power at 1dB C ompressi on Input Thi rd Order Intercept Poi nt Tone spaci ng = 1 MHz ...