SGB10N60A

SGB10N60A Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time – 10 µs Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ C G E PG-TO-263-3-2 Type SGB10N60A VCE IC VCE(sat) Tj Marking Package 600V 10A 2.3V 150°C G10N60A PG-TO-263-3-2 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 10 A, VCC = 50 V, RGE = 25 Ω , start at Tj = 25°C Short circuit withstand time2 VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature (reflow soldering MSL1) Symbol VCE IC ICpuls VGE EAS tSC Ptot Tj , Tstg Value Unit 600 V A 20 10.6 40 40 ±20 V 70 mJ 10 µs 92 W -55...+150 °C 245 1 J-STD-020 and JESD-022 2 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.3 July 07 SGB10N60A Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction...