Low VF Chip Schottky Barrier Diodes
SL12 AND SL14
Silicon epitaxial planer type
Formosa MS
SMA
0.185(4.8) 0.177(4.4) 0...
Low VF Chip
Schottky Barrier Diodes
SL12 AND SL14
Silicon epitaxial planer type
Formosa MS
SMA
0.185(4.8) 0.177(4.4) 0.012(0.3) Typ.
Features
Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current.
0.067(1.7) 0.060(1.5)
0.110(2.8) 0.094(2.4)
0.165(4.2) 0.150(3.8)
0.040(1.0) Typ.
0.040 (1.0) Typ.
Mechanical data
Case : Molded plastic, JEDEC DO-214AC Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting P osition : Any Weight : 0.0015 ounce, 0.05 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER Forward rectified current Forward surge current See Fig.2 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C CONDITIONS Symbol IO IFSM MIN. TYP. MAX. 1.0 30 1.0 10 Rq JA CJ TSTG -55 80 130 +150
o
UNIT A A mA mA C / w pF
o
Reverse current Thermal resistance Diode junction capacitance Storage temperature
VR = VRRM TA = 100o C Junction to ambient f=1MHz and applied 4vDC reverse voltage
IR
C
SYMBOLS
MARKING CODE SL12 SL14
V RRM
(V)
*1
V RMS
(V) 14 28
*2
VR
*3
VF
*4
Operating temperature ( o C) -55 to +125
(V) 20 40
(V) 0.38 0.40
*1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward volta...