Document
PROTECTION PRODUCTS
Description
The SL series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD, lightning, and other voltage-induced transient events. They are available with operating voltages of 5V, 12V, 15V and 24V.
TVS diodes are solid-state devices designed specifically for transient suppression. They offer desirable characteristics for board level protection including fast response time, low operating and clamping voltage, and no device degradation. The SL series devices feature a low capacitance, fast switching compensation diode in series with a standard TVS diode. This effectively reduces the overall capacitance of the device to less than 5pF making it an integrated, low capacitance solution for use on high-speed interfaces.
The SL series devices may be used to meet the immunity requirements of IEC 61000-4-2, level 4.
SL05 through SL24
Low Capacitance TVS Diode For High Speed Data Interfaces
Features
Transient protection for high-speed data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (5/50ns) IEC 61000-4-5 (Lightning) 12A (8/20µs)
Small package for use in portable electronics Two devices will protect one line Low capacitance for high-speed data lines Working voltages: 5V, 12V, 15V and 24V Solid-state silicon avalanche technology
Mechanical Characteristics
JEDEC SOT23 package Molding compound flammability rating: UL 94V-0 Marking : Marking Code Packaging : Tape and Reel per EIA 481
Applications
High-Speed data lines Cellular handsets AND accessories Universal Serial Bus (USB) port protection Portable instrumentation LAN/WAN equipment Peripherals
Circuit Diagram
1 3
(N.C.)
2
Revision 09/23/04
Schematic & PIN Configuration
SOT23 Top View
1 www.semtech.com
SL05 through SL24
PROTECTION PRODUCTS Absolute Maximum Rating
Rating Peak Pulse Power (tp = 8/20µs) ESD Voltage (HBM per IEC 61000-4-2) Lead Soldering Temperature Operating Temperature Storage Temperature
Electrical Characteristics
SL05 Parameter
Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage
Symbol
VRWM VBR IR VC
Clamping Voltage
VC
Peak Pulse Current Junction Capacitance
IPP Cj
Symbol
Ppk VESD TL TJ TSTG
Value 300 >25 260 (10 sec.) -55 to +125 -55 to +150
Units Watts
kV °C °C °C
Conditions
It = 1mA VRWM = 5V, T=25°C
IPP = 1A, tp = 8/20µs
IPP = 5A, tp = 8/20µs tp = 8/20µs Pin 1 to 2 VR = 0V, f = 1MHz
Minimum 6
Typical
Maximum 5
20 9.8
Units V V µA V
11 V
17 A 5 pF
SL12 Parameter
Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage
Clamping Voltage
Peak Pulse Current Junction Capacitance
2004 Semtech Corp.
Symbol VRWM VBR IR VC
VC
IPP Cj
Conditions
It = 1mA VRWM = 12V, T=25°C
IPP = 1A, tp = 8/20µs
IPP = 5A, tp = 8/20µs tp = 8/20µs Pin 1 to 2 VR = 0V, f = 1MHz
2
Minimum 13.3
Typical
Maximum 12
1 19
Units V V µA V
24 V
12 A 5 pF
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SL05 through SL.
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