Fast IGBT in NPT-technology with soft/ fast recovery anti-parallel EmCon diode
SKP04N60 SKB04N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 75% lower Eoff compar...
Description
SKP04N60 SKB04N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time – 10 µs Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability Very soft, fast recovery anti-parallel EmCon diode
C
G
E
P-TO-220-3-1 (TO-220AB)
P-TO-263-3-2 (D²-PAK) (TO-263AB)
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SKP04N60 SKB04N60 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Tj , Tstg -55...+150 °C
1)
VCE 600V
IC 4A
VCE(sat) 2.3V
Tj 150°C
Package TO-220AB TO-263AB
Ordering Code Q67040-S4216 Q67040-S4229
Symbol VCE IC
Value 600 9.4 4.9
Unit V A
ICpul s IF
19 19
10 4 IFpul s VGE tSC Ptot 19 ±20 10 50 V µs W
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Jul-02
SKP04N60 SKB04N60
Thermal Resistance Parameter Characteristic IGBT thermal resis...
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