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SKB10N60A

Infineon Technologies AG

Fast IGBT

SKB10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to ...


Infineon Technologies AG

SKB10N60A

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Description
SKB10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time – 10 µs Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability Very soft, fast recovery anti-parallel EmCon diode Pb-free lead plating; RoHS compliant Qualified according to JEDEC1 for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ C G E PG-TO-263-3-2 Type SKB10N60A VCE IC VCE(sat) Tj Marking Package 600V 10A 2.3V 150°C K10N60 PG-TO-263-3-2 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time2 VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature (reflow soldering, MSL1) Symbol VCE IC ICpuls - IF IFpuls VGE tSC Ptot Tj , Tstg Ts Value 600 20 10.6 40 40 21 10 42 ±20 10 92 -55...+150 245 Unit V A V µs W °C °C 1 J-STD-020 and JESD-022 2 Allowed number of short circuits: <1000...




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