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SIS85-221 Dataheets PDF



Part Number SIS85-221
Manufacturers ETC
Logo ETC
Description SMT Power Inductor
Datasheet SIS85-221 DatasheetSIS85-221 Datasheet (PDF)

SMT Power Inductor SIS85 Type Features Low profile (5.0mm max. height), high current (6.8A, 1uH) SMD type. Unshielded, suitable for high density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing. Ideal for power source circuits, DC-DC converter, DC-AC inverters inductor application. In addition to the standard versions shown here, custom inductors are available to meet your exact requirements. Mechanical Dimension: Unit: mm Recommended Pad 9.4 Max. 2.54 0.2 .

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SMT Power Inductor SIS85 Type Features Low profile (5.0mm max. height), high current (6.8A, 1uH) SMD type. Unshielded, suitable for high density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing. Ideal for power source circuits, DC-DC converter, DC-AC inverters inductor application. In addition to the standard versions shown here, custom inductors are available to meet your exact requirements. Mechanical Dimension: Unit: mm Recommended Pad 9.4 Max. 2.54 0.2 2.54 0.2 2.92 2.79 12.95 Max. 7.62 0.2 7.37 5.0 Max. Electrical Characteristics: PART NO. SIS85-1R0 SIS85-1R5 SIS85-2R2 SIS85-3R3 SIS85-4R7 SIS85-6R8 SIS85-100 SIS85-150 SIS85-220 SIS85-330 SIS85-470 SIS85-680 SIS85-101 SIS85-151 SIS85-221 SIS85-331 SIS85-471 SIS85-681 SIS85-102 1000.00 L (uH) 1.0 1.5 2.2 3.3 4.7 6.8 10 15 22 33 47 68 102 681 471 331 221 151 101 680 470 330 220 150 100 6R8 4R7 3R3 2R2 1R5 1R0 DCR ( ) MAX 0.009 0.010 0.012 0.015 0.018 0.027 0.038 0.046 0.085 0.100 0.140 0.200 0.280 0.400 0.610 1.020 1.270 2.020 3.000 Is (Adc) 9.0 8.0 7.0 6.4 5.4 4.6 3.8 3.0 2.6 2.0 1.6 1.4 1.2 1.0 0.8 0.6 0.5 0.4 0.3 Ir (Adc) 6.8 6.4 6.1 4.8 4.4 3.9 3.1 2.7 2.1 1.8 1.5 1.3 1.0 0.8 0.6 0.5 0.4 0.3 5.4 100.00 INDUCTANCE (uH) 10.00 100 150 220 330 470 680 1000 1.00 0.00 0.01 0.10 1.00 10.00 100.00 Tolerance of inductance 1.0~1000uH 20% L<10% at IS T<45oC at Ir Operating temperature: -20oC to 105oC (including self-temperature rise) Test condition at 25oC: 100KHz, 0.1V CURRENT (A) DELTA ELECTRONICS, INC. (TAOYUAN PLANT CPBG) 252, SAN YING ROAD, KUEISAN INDUSTRIAL ZONE, TAOYUAN SHIEN, 333, TAIWAN, R.O.C. TEL: 886-3-3591968; FAX: 886-3-3591991 http://www.deltaww.com 64 .


SIS85-220 SIS85-221 SIS85-2R2


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