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SI9958DY Dataheets PDF



Part Number SI9958DY
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Complementary 20-V (D-S) MOSFET
Datasheet SI9958DY DatasheetSI9958DY Datasheet (PDF)

Si9958DY Vishay Siliconix Complementary 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel N Ch l 20 rDS(on) (W) 0.10 @ VGS = 10 V 0.12 @ VGS = 6 V 0.15 @ VGS = 4.5 V 0.10 @ VGS = –10 V 0.12 @ VGS = –6V 0.19 @ VGS = –4.5 V ID (A) "3.5 "3 "2.5 "3.5 "3 "2.5 P-Channel P Ch l –20 20 D1 D1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View S1 N-Channel MOSFET D2 D2 8 7 6 5 D1 D1 D2 D2 G1 G2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate.

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Si9958DY Vishay Siliconix Complementary 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel N Ch l 20 rDS(on) (W) 0.10 @ VGS = 10 V 0.12 @ VGS = 6 V 0.15 @ VGS = 4.5 V 0.10 @ VGS = –10 V 0.12 @ VGS = –6V 0.19 @ VGS = –4.5 V ID (A) "3.5 "3 "2.5 "3.5 "3 "2.5 P-Channel P Ch l –20 20 D1 D1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View S1 N-Channel MOSFET D2 D2 8 7 6 5 D1 D1 D2 D2 G1 G2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg N-Channel 20 "20 "3.5 "2.8 "14 1.7 2.0 1.3 P-Channel –20 "20 "3.5 "2.8 "14 –1.7 Unit V A W _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70141 S-01025—Rev. J, 22-May-00 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA N- or P-Channel 62.5 Unit _C/W 1 Si9958DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = 16 V, VGS = 0 V Z G V l D i Current C Zero Gate Voltage Drain IDSS VDS = –16 V, VGS = 0 V VDS = 10 V, VGS = 0 V, TJ = 70_C VDS = –10 V, VGS = 0 V, TJ = 70_C VDS w 5 V, VGS = 10 V b O S D i Current C On-State Drain Symbol Test Condition Min Typa Max Unit N-Ch P-Ch 1.0 –1.0 "100 V nA N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 5.6 4.0 0.9 –0.9 14 –14 3.5 –2.5 1 –1 5 –5 mA ID(on) VDS v –5 V, VGS = –10 V VDS w 5 V, VGS = 4.5 V VDS v –5 V, VGS = –4.5 V VGS = 10 V, ID = 3.5 A VGS = –10 V, ID = 3.5 A A 0.10 0.10 0.12 0.12 0.15 0.19 S 1.2 –1.2 W b D i S O S R i Drain-Source On-State Resistance rDS(on) VGS = 6 V, ID = 3 A VGS = – 6 V, ID = 3 A VGS = 4.5 V, ID = 2 A VGS = –4.5 V, ID = 2 A VDS = 15 V, ID = 3.5 A VDS = –15 V, ID = –3.5 A IS = 1.7 A, VGS = 0 V IS = –1.7 A, VGS = 0 V Forward Transconductanceb Diode Forward Voltageb gfs VSD V Dynamica Total Gate Charge Qg Qgs Qgd td(on) tr td(off) tf trr IF = 3.5 A, di/dt = 100 A/ms N Channel Ch l N-Channel VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 10 V, RG = 6 W P-Channel VDD = –10 10 V V, RL = 10 W ID ^ –1 A, VGEN = –10 V, RG = 6 W N-Channel N Ch Channel l VDS = 10 V, VGS = 10 V, ID = 3.5 A P-Channel VDS = –10 10 V, V VGS = –10 10 V, V ID = –3.5 35A Gate-Drain Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 9 13 1.0 2.0 3.1 5.4 5 21 12 12 17 12 9 11 60 50 10 40 25 25 30 30 20 20 100 100 ns 30 30 nC C Gate-Source Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com S FaxBack 408-970-5600 2 Document Number: 70141 S-01025—Rev. J, 22-May-00 Si9958DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 10, 9, 8, 7, 6 V 16 15 I D – Drain Current (A) 5V 10 I D – Drain Current (A) 12 20 NĆCHANNEL Transfer Characteristics 8 TC = 125_C 4 25_C –55_C 0 5 4V 3V 0 0 2 4 6 8 10 0 1 2 3 4 5 6 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.20 1600 Capacitance r DS(on) – On-Resistance ( Ω ) 0.16 VGS = 4.5 V C – Capacitance (pF) 1200 0.12 VGS = 6 V 0.08 VGS = 10 V 0.04 Coss 800 Ciss 400 Crss 0 0 0 2 4 6 8 10 0 5 10 15 20 25 30 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 10 VDS = 10 V ID = 3.5 A 1.8 On-Resistance vs. Junction Temperature V GS – Gate-to-Source Voltage (V) r DS(on) – On-Resistance ( Ω ) (Normalized) 8 1.6 VGS = 10 V ID = 3.5 A 1.4 6 1.2 4 1.0 2 0.8 0 0 2 4 6 8 10 0.6 –50 0 50 100 150 Qg – Total Gate Charge (nC) Document Number: 70141 S-01025—Rev. J, 22-May-00 TJ – Junction Temperature (_C) www.vishay.com S FaxBack 408-970-5600 3 Si9958DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 TJ = 150_C 10 I S – Source Current (A) r DS(on) – On-Resistance ( Ω ) 0.12 0.16 NĆCHANNEL On-Resistance vs. Gate-to-Source Voltage TJ = 25_C 0.08 0.04 ID = 3.5 A 1 0 0.4 0.8 1.2 1.6 2.0 0 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 1.0 ID = 250 µA 0.5 V GS(th) Variance (V) 20 25 Single Pulse Power 0.0 Power (W) 15 10 –0.5 5 –1 –50 0 0 50 TJ – Temperature (_C) 100 150 0.01 0.1 1 Time (sec) 10 100 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Norm.


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