Document
Si9958DY
Vishay Siliconix
Complementary 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
N-Channel N Ch l 20
rDS(on) (W)
0.10 @ VGS = 10 V 0.12 @ VGS = 6 V 0.15 @ VGS = 4.5 V 0.10 @ VGS = –10 V 0.12 @ VGS = –6V 0.19 @ VGS = –4.5 V
ID (A)
"3.5 "3 "2.5 "3.5 "3 "2.5
P-Channel P Ch l
–20 20
D1
D1
S2
SO-8
S1 G1 S2 G2 1 2 3 4 Top View S1 N-Channel MOSFET D2 D2 8 7 6 5 D1 D1 D2 D2 G1
G2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
N-Channel
20 "20 "3.5 "2.8 "14 1.7 2.0 1.3
P-Channel
–20 "20 "3.5 "2.8 "14 –1.7
Unit
V
A
W _C
–55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70141 S-01025—Rev. J, 22-May-00 www.vishay.com S FaxBack 408-970-5600
Symbol
RthJA
N- or P-Channel
62.5
Unit
_C/W
1
Si9958DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = 16 V, VGS = 0 V Z G V l D i Current C Zero Gate Voltage Drain IDSS VDS = –16 V, VGS = 0 V VDS = 10 V, VGS = 0 V, TJ = 70_C VDS = –10 V, VGS = 0 V, TJ = 70_C VDS w 5 V, VGS = 10 V
b O S D i Current C On-State Drain
Symbol
Test Condition
Min
Typa
Max
Unit
N-Ch P-Ch
1.0 –1.0 "100
V nA
N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 5.6 4.0 0.9 –0.9 14 –14 3.5 –2.5
1 –1 5 –5 mA
ID(on)
VDS v –5 V, VGS = –10 V VDS w 5 V, VGS = 4.5 V VDS v –5 V, VGS = –4.5 V VGS = 10 V, ID = 3.5 A VGS = –10 V, ID = 3.5 A
A
0.10 0.10 0.12 0.12 0.15 0.19 S 1.2 –1.2 W
b D i S O S R i Drain-Source On-State Resistance
rDS(on)
VGS = 6 V, ID = 3 A VGS = – 6 V, ID = 3 A VGS = 4.5 V, ID = 2 A VGS = –4.5 V, ID = 2 A VDS = 15 V, ID = 3.5 A VDS = –15 V, ID = –3.5 A IS = 1.7 A, VGS = 0 V IS = –1.7 A, VGS = 0 V
Forward Transconductanceb Diode Forward Voltageb
gfs VSD
V
Dynamica
Total Gate Charge Qg Qgs Qgd td(on) tr td(off) tf trr IF = 3.5 A, di/dt = 100 A/ms N Channel Ch l N-Channel VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 10 V, RG = 6 W P-Channel VDD = –10 10 V V, RL = 10 W ID ^ –1 A, VGEN = –10 V, RG = 6 W N-Channel N Ch Channel l VDS = 10 V, VGS = 10 V, ID = 3.5 A P-Channel VDS = –10 10 V, V VGS = –10 10 V, V ID = –3.5 35A Gate-Drain Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 9 13 1.0 2.0 3.1 5.4 5 21 12 12 17 12 9 11 60 50 10 40 25 25 30 30 20 20 100 100 ns 30 30 nC C
Gate-Source Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
www.vishay.com S FaxBack 408-970-5600
2
Document Number: 70141 S-01025—Rev. J, 22-May-00
Si9958DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20 VGS = 10, 9, 8, 7, 6 V 16 15 I D – Drain Current (A) 5V 10 I D – Drain Current (A) 12 20
NĆCHANNEL
Transfer Characteristics
8 TC = 125_C 4 25_C –55_C 0
5
4V
3V 0 0 2 4 6 8 10 0 1 2 3
4
5
6
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.20 1600
Capacitance
r DS(on) – On-Resistance ( Ω )
0.16
VGS = 4.5 V C – Capacitance (pF)
1200
0.12 VGS = 6 V 0.08 VGS = 10 V 0.04
Coss 800
Ciss 400 Crss 0
0 0 2 4 6 8 10
0
5
10
15
20
25
30
ID – Drain Current (A)
VDS – Drain-to-Source Voltage (V)
Gate Charge
10 VDS = 10 V ID = 3.5 A 1.8
On-Resistance vs. Junction Temperature
V GS – Gate-to-Source Voltage (V)
r DS(on) – On-Resistance ( Ω ) (Normalized)
8
1.6
VGS = 10 V ID = 3.5 A
1.4
6
1.2
4
1.0
2
0.8
0 0 2 4 6 8 10
0.6 –50
0
50
100
150
Qg – Total Gate Charge (nC) Document Number: 70141 S-01025—Rev. J, 22-May-00
TJ – Junction Temperature (_C) www.vishay.com S FaxBack 408-970-5600
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Si9958DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20 TJ = 150_C 10 I S – Source Current (A) r DS(on) – On-Resistance ( Ω ) 0.12 0.16
NĆCHANNEL
On-Resistance vs. Gate-to-Source Voltage
TJ = 25_C
0.08
0.04
ID = 3.5 A
1 0 0.4 0.8 1.2 1.6 2.0
0 0 2 4 6 8 10
VSD – Source-to-Drain Voltage (V)
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
1.0 ID = 250 µA 0.5 V GS(th) Variance (V) 20 25
Single Pulse Power
0.0
Power (W)
15
10
–0.5 5
–1 –50
0 0 50 TJ – Temperature (_C) 100 150 0.01 0.1 1 Time (sec) 10 100
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Duty Cycle = 0.5 Norm.