SI9948AEY

Si9948AEY Vishay Siliconix Dual P-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY VDS (V) –60 rDS(on) (W) 0.17 @ VGS = –10 V 0.26 @ VGS = –4.5 V ID (A) "2.6 "2.1 S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D1 D1 D2 D2 D1 D1 D2 D2 G1 G2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit –60 "20 "2.6 "2.2 "15 –2 2.4 Unit V A W 1.7 –55 to 175 _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta t v 10 sec RthJA Steady State Notes a. Surface Mounted on 1” x 1” FR4 Board For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70759 S-57253—Rev. B, 24-Feb-98 www.vishay.com S FaxBack 408-970-5600 93 Symbol Typ Max 62.5 Unit _C/W 2-1 Si9948AEY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = –60 V, VGS = 0 V VDS = –60 V, VGS = 0 V, TJ = 55_...