SI9933BDY

Si9933BDY New Product Vishay Siliconix Dual P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) 0.06 @ VGS = −4.5 V 0.10 @ VGS = −2.5 V ID (A) −4.7 −3.7 SO-8 S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D1 D1 D2 D2 G1 S1 S2 G2 Ordering Information: Si9933BDY—E3 (Lead Free) Si9933BDY-T1—E3 (Lead Free with Tape and Reel) D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State −20 "12 Unit V −4.7 −3.8 −20 −1.7 2.0 1.3 −55 to 150 −3.6 −2.8 A −0.9 1.1 0.7 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72748 S-40237—Rev. A, 16-Feb-04 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 55 90 33 Maximum 62.5 110 40 Unit _C/W 1 Si9933BDY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Curren...