SI9433DY

Si9433DY Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) 0.045 @ VGS = –4.5 V 0.070 @ VGS = –2.7 V ID (A) "5.4 "4.2 S S S SO-8 S S S G 1 2 3 4 Top View D D D D P-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit –20 "12 "5.4 "4.4 "20 –2.6 2.5 Unit V A W 1.6 –55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70125 S-00652—Rev. J, 27-Mar-00 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA Limit 50 Unit _C/W 1 Si9433DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "12 V VDS = –16 V, VGS = 0 V VDS = –10 V, VGS = 0 V, TJ = 70_C VDS v–5 V, VGS = –4.5 V VDS v–5 V, VGS = –2.7 V VGS = –4.5 V, ID = –5.1 A VGS = –2.7 V, ID = –2.0 A VDS = –9 V, ID = –5.1 A IS = –2.6 A, VGS = 0 V –20 A –5 0.032 0.052 15 –0.76 –1.2 0.045 0.070 W S V –0.8 "100 –1 –5 V nA mA Symbol Test Condition Min Typa Max Unit On-State Drain C...