SI9428DY

Si9428DY Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.03 @ VGS = 4.5 V 0.04 @ VGS = 2.5 V ID (A) 6 5.2 D1 D1 SO-8 S S S G 1 2 3 4 Top View S1 Ordering Information: Si9428DY Si9428DY-T1 (with Tape and Reel) N-Channel MOSFET 8 7 6 5 D D D D G1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID IDM IS Symbol VDS VGS Limit 20 "8 6 4.8 20 1.7 2.5 1.6 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta t v10 sec Steady State RthJA 70 Symbol Typical Maximum 50 Unit _C/W Notes a. Surface Mounted on FR4 Board. b. t v10 sec. Document Number: 70810 S-03950—Rev. C, 26-May-03 www.vishay.com 1 Si9428DY Vishay Siliconix MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static-0.6 Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) DS( ) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 4.5 V VGS = 4.5...