SI9407AEY

Si9407AEY Vishay Siliconix P-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY VDS (V) –60 rDS(on) (W) 0.120 @ VGS = –10 V 0.15 @ VGS = –4.5 V ID (A) "3.5 "3.1 S S S SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D G D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit –60 "20 "3.5 "3.0 "30 –2.5 3.0 Unit V A W 2.1 –55 to 175 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70742 S-99445—Rev. C, 29-Nov-99 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA Limit 50 Unit _C/W 2-1 Si9407AEY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = –-60 V, VGS = 0 V VDS = –-60 V, VGS = 0 V, TJ = 55_C VDS v –5 V, VGS = –10 V VGS = –10 V, ID = 3.5 A VGS = –4.5 V, ID = 3.1 A VDS = –15 V, ID = –3.5 A IS = –2.5 A, VGS = 0 V 8 –1.2 –20 0.120 0.150 –1 ...