SI8902EDB

Si8902EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 0.045 @ VGS = 4.5 V 20 0.048 @ VGS = 3.7 V 0.057 @ VGS = 2.5 V 0.072 @ VGS = 1.8 V IS1S2 (A) 5.0 4.8 4.4 3.9 D D D D TrenchFETr Power MOSFET Ultra-Low rSS(on) ESD Protected: 4000 V New MICRO FOOTt Chipscale Packaging Reduces Footprint Area, Profile (0.65 mm) and On-Resistance Per Footprint Area APPLICATIONS D Battery Protection Circuit - 1-2 Cell Li+/LiP Battery Pack for Portable Devices S1 MICRO FOOTt Bump Side View Backside View S2 5 4 S2 Pin 1 Identifier G1 4 kW 8902E xxx G2 6 3 G1 Device Marking: 8902E = P/N Code xxx = Date/Lot Traceability Code G2 4 kW S1 1 2 S1 S2 N-Channel ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Source1—Source2 Voltage Gate-Source Voltage Continuous Source1—Source2 Current (TJ = 150_C)a Pulsed Source1—Source2 Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range Package Reflow Conditionsc VPR IR/Convection TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VS1S2 VGS IS1S2 ISM 5 secs 20 Steady State "12 Unit V 5.0 3.4 8 1.7 3.9 2.8 A 1 0.5 -55 to 150 215 220 _C W PD TJ, Tstg 0.8 THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Footb Steady State Steady State RthJA RthJF Symbol Typical 60 95 18 Maximum 75 120 22 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. The Foot is de...