P-Channel MOSFET
12 V P-Channel 1.8 V (G-S) MOSFET
Si8405DB
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) - 12
RDS(on) () 0.055 at VGS = ...
Description
12 V P-Channel 1.8 V (G-S) MOSFET
Si8405DB
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) - 12
RDS(on) () 0.055 at VGS = - 4.5 V 0.070 at VGS = - 2.5 V 0.090 at VGS = - 1.8 V
ID (A) - 4.9 - 4.4 -4
MICRO FOOT
Bump Side View
Backside View
3 D
2 D
8405 xxx
S 4
G 1
Device Marking: 8405 xxx = Date/Lot Traceability Code
Ordering Information: Si8405DB-T1-E1 (Lead (Pb)-free and Halogen-free)
FEATURES TrenchFET® Power MOSFET MICRO FOOT® Chipscale Packaging
Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area
Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
PA, Battery and Load Switch
S
Battery Charger Switch
G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
- 12
V
VGS
±8
Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current
TA = 25 °C TA = 70 °C
ID
- 4.9 - 3.9
- 3.6 - 2.8
A
IDM
- 10
Continuous Source Current (Diode Conduction)a
IS
- 2.5
- 1.3
Maximum Power Dissipationa
TA = 25 °C TA = 70 °C
PD
2.77
1.47
1.77
0.94
W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Package Reflow Conditionsb
IR/Convection
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Maximum Junction-to-Ambienta
t5s Steady State
RthJA
35 72
45 85
Maximum Junction-to-Foot (drain)
Steady State
RthJF
16
...
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