SI7898DP

Si7898DP New Product Vishay Siliconix N-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) 0.085 @ VGS = 10 V 0.095 @ VGS = 6.0 V ID (A) 4.8 4.5 D TrenchFETr Power MOSFET for Fast Switching D PWM Optimized D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile APPLICATIONS D DC/DC Power Supply Primary Side Switch D Automotive and Industrial Motor Drives PowerPAKt SO-8 D 6.15 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 5.15 mm G S N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Avalanch Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C L = 0.1 mH TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 150 "20 4.8 Steady State Unit V 3.0 2.4 25 10 A ID IDM IAS IS PD TJ, Tstg 3.8 4.1 5.0 3.2 –55 to 150 1.6 1.9 1.2 W _C THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71873 S-20827—Rev. A, 17-Jun-02 www.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 20 52 2.1 Maximum 25 65 2.6 Unit _C/W 1 Si7898DP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Vo...