N-Channel 200-V (D-S) MOSFET
Si7450DP
New Product
Vishay Siliconix
N-Channel 200-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
200
FEATURES
ID (A)
5.3 5....
Description
Si7450DP
New Product
Vishay Siliconix
N-Channel 200-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
200
FEATURES
ID (A)
5.3 5.0
rDS(on) (W)
0.080 @ VGS = 10 V 0.090 @ VGS = 6 V
D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching
APPLICATIONS
D Primary Side Switch for High Density DC/DC D Telecom/Server 48-V DC/DC D Industrial and 42-V Automotive
D
PowerPAKt SO-8
6.15 mm
S 1 2 3 S S
5.15 mm
G 4
G N-Channel MOSFET
D 8 7 6 5 D D D
Bottom View S
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Avalanche Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS
10 secs
200 "20 5.3
Steady State
Unit
V
3.2 2.6 40 15 A
ID IDM IAS IS PD TJ, Tstg
4.3
4.3 5.2 3.3 β55 to 150
1.6 1.9 1.2 W _C
THERMAL RESISTANCE RATINGS
Parameter
t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1β x 1β FR4 Board. Document Number: 71432 S-03475βRev. B, 16-Apr-01 www.vishay.com Steady State Steady State RthJA RthJC
Symbol
Typical
19 52 1.5
Maximum
24 65 1.8
Unit
_C/W
1
Si7450DP
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leak...
Similar Datasheet