SI7450DP

Si7450DP New Product Vishay Siliconix N-Channel 200-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 200 FEATURES ID (A) 5.3 5.0 rDS(on) (W) 0.080 @ VGS = 10 V 0.090 @ VGS = 6 V D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching APPLICATIONS D Primary Side Switch for High Density DC/DC D Telecom/Server 48-V DC/DC D Industrial and 42-V Automotive D PowerPAKt SO-8 6.15 mm S 1 2 3 S S 5.15 mm G 4 G N-Channel MOSFET D 8 7 6 5 D D D Bottom View S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Avalanche Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 200 "20 5.3 Steady State Unit V 3.2 2.6 40 15 A ID IDM IAS IS PD TJ, Tstg 4.3 4.3 5.2 3.3 –55 to 150 1.6 1.9 1.2 W _C THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71432 S-03475—Rev. B, 16-Apr-01 www.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 19 52 1.5 Maximum 24 65 1.8 Unit _C/W 1 Si7450DP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leak...