SMBD2836

Silicon Switching Diode Array SMBD 2835 SMBD 2836 For high-speed switching applications q Common anode q Type SMBD 2835 SMBD 2836 Marking sA3 sA2 Ordering Code (tape and reel) Q68000-A8547 Q68000-A8436 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation, TS = 31 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VR VRM IF IFS Ptot Tj Tstg Values Unit SMBD 2835 SMBD 2836 30 35 50 75 200 4.5 330 150 – 65 … + 150 mA A mW ˚C V 500 360 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SMBD 2835 SMBD 2836 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) = 100 µA Forward voltage IF = 10 mA IF = 50 mA IF = 100 mA Reverse current VR = 30 V VR = 50 V AC characteristics Diode capacitance VR = 0, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA Test circuit for reverse recovery time CD trr – – – – 4 6 pF ns SMBD 2835 SMBD 2836 V(BR) SMBD 2835 SMBD 2836 VF – – – IR – – – – 100 100 – – – 855 1000 1200 nA 35 75 – – – – mV V Values typ. max. Unit Pulse generator: tp = 100 ns, D = 0.05 tr = 0.6 ns, Rj = 50 Ω Oscillograph: R = 50 Ω tr = 0.35...