DatasheetsPDF.com

SM6HTXXA Dataheets PDF



Part Number SM6HTXXA
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description HIGH TEMPERATURE TRANSILTM FOR AUTOMOTIVE APPLICATIONS
Datasheet SM6HTXXA DatasheetSM6HTXXA Datasheet (PDF)

® SM6HTxxA HIGH TEMPERATURE TRANSILTM FOR AUTOMOTIVE APPLICATIONS FEATURES HIGH PERFORMANCE TRANSIL DESIGNED TO FIT HIGH TEMPERATURE ENVIRONMENT LIKE AUTOMOTIVE APPLICATIONS... HIGH RELIABILITY PLANAR TECHNOLOGY HIGH PERFORMANCE IN VOLTAGE REGULATION MODE VERY LOW LEAKAGE CURRENT (IR max = 5µA @ Tamb = 150°C) PEAK PULSE POWER : 600 W (10/1000µs) FAST RESPONSE TIME UNIDIRECTIONAL TYPE LOW CLAMPING FACTOR DESCRIPTION This high performance Transil series has been designed to fit high temperature .

  SM6HTXXA   SM6HTXXA



Document
® SM6HTxxA HIGH TEMPERATURE TRANSILTM FOR AUTOMOTIVE APPLICATIONS FEATURES HIGH PERFORMANCE TRANSIL DESIGNED TO FIT HIGH TEMPERATURE ENVIRONMENT LIKE AUTOMOTIVE APPLICATIONS... HIGH RELIABILITY PLANAR TECHNOLOGY HIGH PERFORMANCE IN VOLTAGE REGULATION MODE VERY LOW LEAKAGE CURRENT (IR max = 5µA @ Tamb = 150°C) PEAK PULSE POWER : 600 W (10/1000µs) FAST RESPONSE TIME UNIDIRECTIONAL TYPE LOW CLAMPING FACTOR DESCRIPTION This high performance Transil series has been designed to fit high temperature environment such as automotive applications, using surface mount technology. These devices are using high reliability planar technology resulting in high performances in voltage regulation mode and low leakage current at high temperature. ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol PPP P IFSM Tstg, TJ TL Parameter Peak pulse power dissipation (see note 1) Power dissipation on infinite heatsink Non repetitive surge peak forward current for unidirectional types Tj initial = Tamb Tamb = 50°C tp = 10ms Tj initial = Tamb Value 600 5 75 - 65 to 175 260 Unit W W A °C °C SMB (JEDEC D0-214AA) Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s. Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit. THERMAL RESISTANCES Symbol Rth (j-l) Rth (j-a) Junction to leads Junction to ambient on printed circuit. On recommended pad layout Parameter Value 20 100 Unit °C/W °C/W April 1999 Ed: 4A 1/5 SM6HTxxA ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise specified) Symbol VRM VBR VCL IRM IPP VF Parameter IF I Stand-off voltage Breakdown voltage Clamping voltage Leakage current @ VRM Peak pulse current Forward voltage drop VF < 3.5V @ IF = 50A (pulse test: tp ≤ 500µs) I PP VCL VBR V RM VF I RM V Types Marking IRM @ VRM min V 22.8 25.7 28.5 34.2 37.1 40.9 VBR note2 nom V 24 27 30 36 39 43 @ IR VCL @ IPP 10/1000µs max V A 33.2 18.0 37.5 41.5 49.9 53.9 59.3 16.0 14.5 12.0 11.1 10.1 αT max note 3 10-4/°C 9.4 9.6 9.7 9.9 10.0 10.1 SM6HT24A SM6HT27A SM6HT30A SM6HT36A SM6HT39A SM6HT43A EMB EPB ERB EVB EXB EYB Tamb=25°C Tamb=150°C max max µA µA 2 5 2 2 2 2 2 5 5 5 5 5 V 20.5 23.1 25.6 30.8 33.3 36.8 max V 25.2 28.4 31.5 37.8 41.0 45.2 mA 1 1 1 1 1 1 Note 2 : Pulse test : tp < 50 ms Note 3 : ∆VBR = αT x (Tamb - 25) x VBR (25°C) 2/5 SM6HTxxA Fig. 1-1: Peak power dissipation versus initial junction temperature. Fig. 1-2: Continous power dissipation versus ambient temperature. Ppp[Tj initial] / Ppp[Tj initial=25°C] 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 6 5 4 3 2 1 P(W) Rth(j-a)=Rth(j-l) Rth(j-a)=100°C/W Tj initial(°C) 0 25 50 75 100 125 150 175 200 0 Tamb(°C) 0 25 50 75 100 125 150 175 Fig. 2: Peak pulse power versus exponential pulse duration (Tj initial=25°C). Fig. 3: Clamping voltage versus peak pulse current (Tj initial=25°C). 10.0 Ppp(kW) Ipp(A) 1E+2 SM6HT27A SM6HT24A SM6HT30A SM6HT36A SM6HT39A tp=20µs 1E+1 SM6HT43A 1.0 1E+0 tp=1ms tp(ms) .


SM6HT43A SM6HTXXA SM6K2


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)