SMBTA63

PNP Silicon Darlington Transistors SMBTA 63 SMBTA 64 High collector current q High DC current gain q Type SMBTA 63 SMBTA 64 Marking s2U s2V Ordering Code (tape and reel) Q68000-A2625 Q68000-A2485 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 81 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol SMBTA 63 VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 30 30 10 Values SMBTA 64 30 30 10 500 800 100 200 360 150 Unit V mA mW ˚C – 65 … + 150 280 210 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SMBTA 63 SMBTA 64 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 µA Collector-base breakdown voltage IC = 10 µA Emitter-base breakdown voltage IE = 10 µA Collector-base cutoff current VCB = 30 V Emitter cutoff current VEB = 10 V DC current gain1) IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V SMBTA 63 SMBTA 64 SMBTA 63 SMBTA 64 VCEsat VBEsat V(BR)CE0 V(BR)CB0 V(BR)EB0 ICB0 IEB0 hFE 5000 10000 10000 20000 – – – – – – – – – – – – 1.5 2 V 30 30 10 – – – – – – – – – – 100 100 – nA V V...