Document
SMBT 3906S
PNP Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Two ( galvanic) internal isolated Transistors with high matching in one package • Complementary type: SMBT 3904S (NPN)
4 5 6
2 1
3
VPS05604
Type SMBT 3906S
Marking Ordering Code s2A Q62702-A1202
Pin Configuration
Package
1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 SOT-363
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Total power dissipation, T S = 115 °C Junction temperature Storage temperature Thermal Resistance Junction ambient 1) Junction - soldering point Symbol Value 40 40 6 200 250 150 - 65...+150 mA mW °C Unit V
VCEO VCBO VEBO IC Ptot Tj Tstg
RthJA RthJS
≤275 ≤140
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group Semiconductor Group 11
Sep-07-1998 1998-11-01
SMBT 3906S
Electrical Characteristics at TA =25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage typ. max. 50
Unit
V(BR)CEO V(BR)CBO V(BR)EBO ICBO hFE
40 40 5 -
V
I C = 1 mA, I B = 0
Collector-base breakdown voltage
I C = 10 µA, IB = 0
Emitter-base breakdown voltage
I E = 10 µA, I C = 0 Collector cutoff current VCB = 30 V, I E = 0
DC current gain 1)
nA -
I C = 100 µA, V CE = 1 V I C = 1 mA, V CE = 1 V I C = 10 mA, VCE = 1 V I C = 50 mA, VCE = 1 V I C = 100 mA, V CE = 1 V
Collector-emitter saturation voltage1)
60 80 100 60 30
-
300 V
VCEsat
0.25 0.4 0.85 0.95
I C = 10 mA, I B = 1 mA I C = 50 mA, I B = 5 mA
Base-emitter saturation voltage 1)
VBEsat
0.65 -
I C = 10 mA, I B = 1 mA I C = 50 mA, I B = 5 mA
1) Pulse test: t < 300µs; D < 2% Semiconductor Group Semiconductor Group 22
Sep-07-1998 1998-11-01
SMBT 3906S
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC Characteristics Transition frequency typ. max. 4.5 10 12 10 400 60 4
Unit
fT Ccb Ceb h11e h12e h21e h22e F
250 2 0.1 100 3 -
MHz pF
I C = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Short-circuit input impedance kΩ 10-4 µs dB
I C = 2 mA, V CE = 5 V, f = 1 kHz
Open-circuit reverse voltage transfer ratio
I C = 2 mA, V CE = 5 V, f = 1 kHz
Short-circuit forward current transfer ratio
I C = 2 mA, V CE = 5 V, f = 1 kHz
Open-circuit output admittance
I C = 2 mA, V CE = 5 V, f = 1 kHz
Noise figure
I C = 100 µA, V CE = 5 V, R S = 1 kΩ, f = 1 kHz, ∆ f = 200 Hz
Delay time
td
-
-
35
ns
VCC = 3 V, I C = 10 mA, I B1 = 1 mA, VBE(off) = 0.5 V
Rise time
tr
-
-
35
VCC = 3 V, I C = 10 mA, I B1 = 1 mA, VBE(off) = 0.5 V
Storage time
tstg tf
-
-
225 75
VCC = 3 V, I C = 10 mA, I B1=I B2 = 1mA
Fall time
VCC = 3 V, I C = 10 mA, I B1=I B2 = 1mA
Semiconductor Group Semiconductor Group
33
Sep-07-1998 1998-11-01
SMBT 3906S
Test circuit Delay and rise time
-3.0 V
275 Ω <1.0 ns +0.5 V 10 kΩ 0 -10.6 V D = 2%
C
<4.0 pF
300 ns
EHN00059
Storage time and fall time
-3.0 V
<1.0 ns +9.1 V 0 -10.9 V 10 < t 1< 500 µs D = 2% 10 kΩ
275 Ω
C
1N916 <4.0 pF
t1
EHN00060
Semiconductor Group Semiconductor Group
44
Sep-07-1998 1998-11-01
SMBT 3906S
Total power dissipation Ptot = f (TA *;TS ) * Package mounted on epoxy
300
mW
TS P tot
200
TA
150
100
50
0 0
20
40
60
80
100
120 °C
Kein 150
TA,TS
Permissible Pulse Load R thJS = f (tp)
Permissible Pulse Load
Ptotmax / PtotDC = f (tp)
10 3
K/W
10 3
Ptotmax / PtotDC
-
10 2
10 2
10 1
10 0
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
RthJS
10 1
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
Semiconductor Group Semiconductor Group
55
Sep-07-1998 1998-11-01
SMBT 3906S
DC current gain h FE = f (I C)
Saturation voltage IC = f (VBEsat, VCEsat)
VCE = 10V, normalized
10 1
EHP00774
h FE = 10
EHP00767
2 mA
h FE
5
ΙC
10 2 5
125 C
V CE
10 0 25 C
10 1
V BE
5
-55 C
5
10 -1 -1 10
10 0
5 10
0
5 10
1
mA
10
2
0
0.2
0.4
0.6
0.8
1.0 V 1.2
ΙC
V BE sat , V CE sat
Short-circuit forward current transfer ratio h 21e = f(I C)
Open-circuit output admittance
h 22e = f (IC) VCE = 10V, f = 1MHz
EHP00770
VCE = 10V, f = 1MHz
10 3
10 2 µs
EHP00771
h 21e
5
h 22e
5
10 2
10 1
5
5
10 1 -1 10
5
10
0
mA
5
10
1
10 0 -1 10
5
10
0
mA
5
10
1
ΙC
ΙC
66
Semiconductor Group Semiconductor Group
Sep-07-1998 1998-11-01
SMBT 3906S
Delay time t d = f (IC) Rise time t r = f (I C)
EHP00772
Storage time t stg = f(IC)
10 3 ns
10 3 ns
EHP00762
t r ,t d
10 2
tr td
ts
h FE = 10
10 2
25 C 125 C
h FE = 20 10
VCC = 3 V
15 V 40 V
h FE = 20 10
10 1
V BE = 2 V
0V
10 1
10 0 0 10
5 10 1
5 10 2 mA 5 10 3
10 0 0 10
5 10 1
5 10 2
mA 10 3
ΙC
ΙC
Fall time t f = f (I C)
Rise time tr = f (IC)
10 3 ns 25 C 125 C
EHP00773
10 3 ns
EHP00764
tr
25 C
tf.