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SMBT3906S Dataheets PDF



Part Number SMBT3906S
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description PNP Silicon Switching Transistor Array
Datasheet SMBT3906S DatasheetSMBT3906S Datasheet (PDF)

SMBT 3906S PNP Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Two ( galvanic) internal isolated Transistors with high matching in one package • Complementary type: SMBT 3904S (NPN) 4 5 6 2 1 3 VPS05604 Type SMBT 3906S Marking Ordering Code s2A Q62702-A1202 Pin Configuration Package 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 SOT-363 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC.

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SMBT 3906S PNP Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Two ( galvanic) internal isolated Transistors with high matching in one package • Complementary type: SMBT 3904S (NPN) 4 5 6 2 1 3 VPS05604 Type SMBT 3906S Marking Ordering Code s2A Q62702-A1202 Pin Configuration Package 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 SOT-363 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Total power dissipation, T S = 115 °C Junction temperature Storage temperature Thermal Resistance Junction ambient 1) Junction - soldering point Symbol Value 40 40 6 200 250 150 - 65...+150 mA mW °C Unit V VCEO VCBO VEBO IC Ptot Tj Tstg RthJA RthJS ≤275 ≤140 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group Semiconductor Group 11 Sep-07-1998 1998-11-01 SMBT 3906S Electrical Characteristics at TA =25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage typ. max. 50 Unit V(BR)CEO V(BR)CBO V(BR)EBO ICBO hFE 40 40 5 - V I C = 1 mA, I B = 0 Collector-base breakdown voltage I C = 10 µA, IB = 0 Emitter-base breakdown voltage I E = 10 µA, I C = 0 Collector cutoff current VCB = 30 V, I E = 0 DC current gain 1) nA - I C = 100 µA, V CE = 1 V I C = 1 mA, V CE = 1 V I C = 10 mA, VCE = 1 V I C = 50 mA, VCE = 1 V I C = 100 mA, V CE = 1 V Collector-emitter saturation voltage1) 60 80 100 60 30 - 300 V VCEsat 0.25 0.4 0.85 0.95 I C = 10 mA, I B = 1 mA I C = 50 mA, I B = 5 mA Base-emitter saturation voltage 1) VBEsat 0.65 - I C = 10 mA, I B = 1 mA I C = 50 mA, I B = 5 mA 1) Pulse test: t < 300µs; D < 2% Semiconductor Group Semiconductor Group 22 Sep-07-1998 1998-11-01 SMBT 3906S Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC Characteristics Transition frequency typ. max. 4.5 10 12 10 400 60 4 Unit fT Ccb Ceb h11e h12e h21e h22e F 250 2 0.1 100 3 - MHz pF I C = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance kΩ 10-4 µs dB I C = 2 mA, V CE = 5 V, f = 1 kHz Open-circuit reverse voltage transfer ratio I C = 2 mA, V CE = 5 V, f = 1 kHz Short-circuit forward current transfer ratio I C = 2 mA, V CE = 5 V, f = 1 kHz Open-circuit output admittance I C = 2 mA, V CE = 5 V, f = 1 kHz Noise figure I C = 100 µA, V CE = 5 V, R S = 1 kΩ, f = 1 kHz, ∆ f = 200 Hz Delay time td - - 35 ns VCC = 3 V, I C = 10 mA, I B1 = 1 mA, VBE(off) = 0.5 V Rise time tr - - 35 VCC = 3 V, I C = 10 mA, I B1 = 1 mA, VBE(off) = 0.5 V Storage time tstg tf - - 225 75 VCC = 3 V, I C = 10 mA, I B1=I B2 = 1mA Fall time VCC = 3 V, I C = 10 mA, I B1=I B2 = 1mA Semiconductor Group Semiconductor Group 33 Sep-07-1998 1998-11-01 SMBT 3906S Test circuit Delay and rise time -3.0 V 275 Ω <1.0 ns +0.5 V 10 kΩ 0 -10.6 V D = 2% C <4.0 pF 300 ns EHN00059 Storage time and fall time -3.0 V <1.0 ns +9.1 V 0 -10.9 V 10 < t 1< 500 µs D = 2% 10 kΩ 275 Ω C 1N916 <4.0 pF t1 EHN00060 Semiconductor Group Semiconductor Group 44 Sep-07-1998 1998-11-01 SMBT 3906S Total power dissipation Ptot = f (TA *;TS ) * Package mounted on epoxy 300 mW TS P tot 200 TA 150 100 50 0 0 20 40 60 80 100 120 °C Kein 150 TA,TS Permissible Pulse Load R thJS = f (tp) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 3 K/W 10 3 Ptotmax / PtotDC - 10 2 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Semiconductor Group Semiconductor Group 55 Sep-07-1998 1998-11-01 SMBT 3906S DC current gain h FE = f (I C) Saturation voltage IC = f (VBEsat, VCEsat) VCE = 10V, normalized 10 1 EHP00774 h FE = 10 EHP00767 2 mA h FE 5 ΙC 10 2 5 125 C V CE 10 0 25 C 10 1 V BE 5 -55 C 5 10 -1 -1 10 10 0 5 10 0 5 10 1 mA 10 2 0 0.2 0.4 0.6 0.8 1.0 V 1.2 ΙC V BE sat , V CE sat Short-circuit forward current transfer ratio h 21e = f(I C) Open-circuit output admittance h 22e = f (IC) VCE = 10V, f = 1MHz EHP00770 VCE = 10V, f = 1MHz 10 3 10 2 µs EHP00771 h 21e 5 h 22e 5 10 2 10 1 5 5 10 1 -1 10 5 10 0 mA 5 10 1 10 0 -1 10 5 10 0 mA 5 10 1 ΙC ΙC 66 Semiconductor Group Semiconductor Group Sep-07-1998 1998-11-01 SMBT 3906S Delay time t d = f (IC) Rise time t r = f (I C) EHP00772 Storage time t stg = f(IC) 10 3 ns 10 3 ns EHP00762 t r ,t d 10 2 tr td ts h FE = 10 10 2 25 C 125 C h FE = 20 10 VCC = 3 V 15 V 40 V h FE = 20 10 10 1 V BE = 2 V 0V 10 1 10 0 0 10 5 10 1 5 10 2 mA 5 10 3 10 0 0 10 5 10 1 5 10 2 mA 10 3 ΙC ΙC Fall time t f = f (I C) Rise time tr = f (IC) 10 3 ns 25 C 125 C EHP00773 10 3 ns EHP00764 tr 25 C tf.


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