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K9K2G08Q0M-P Dataheets PDF



Part Number K9K2G08Q0M-P
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
Datasheet K9K2G08Q0M-P DatasheetK9K2G08Q0M-P Datasheet (PDF)

K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1. Initial issue 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA Draft Date Aug. 30.2001 Nov. 5. 2001 Remark Advance Preliminary 0.2 1. 5th cycle of ID is changed : 40h --> 44h 1. Add WSOP Package Dimensions. 1. Add two-K9K2GXXU0M-YCB0/YIB0 Stacked Package 1. Min val.

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Document
K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1. Initial issue 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA Draft Date Aug. 30.2001 Nov. 5. 2001 Remark Advance Preliminary 0.2 1. 5th cycle of ID is changed : 40h --> 44h 1. Add WSOP Package Dimensions. 1. Add two-K9K2GXXU0M-YCB0/YIB0 Stacked Package 1. Min valid block of K9W4GXXU1M-YCB0/YIB0 is changed . - min. 4016 --> 4036 1. Each K9K2GXXX0M chip in the K9W4GXXU1M has Maximum 30 Jan. 23. 2002 Preliminary 0.3 0.4 0.5 May. 29. 2002 Aug. 13. 2 002 Aug. 22. 2002 Preliminary Preliminary Preliminary 0.6 Nov. 07. 2002 Preliminary invalid blocks. 2. K9W4GXXU1M’ s ID is changed (Before) Device K9W4G08U1M K9W4G16U1M (After) Device K9W4G08U1M K9W4G16U1M 2nd Cycle 3rd cycle DAh CAh C1 C1 4th Cycle 15h 55h 5th Cycle 44h 44h Nov. 22. 2002 Preliminary 2nd Cycle 3rd cycle DCh CCh C3 C3 4th Cycle 5th Cycle 15h 55h 4Ch 4Ch 0.7 1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 36) 2. Add the data protection Vcc guidence for 1.8V device - below about 1.1V. (Page 37) 1. The min. Vcc value 1.8V devices is changed. K9K2GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V 0.8 Mar. 6. 2003 Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near your office. 1 K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No 0.9 History Pb-free Package is added. K9K2G08U0M-FCB0,FIB0 K9K2G08Q0M-PCB0,PIB0 K9K2G08U0M-PCB0,PIB0 K9K2G16U0M-PCB0,PIB0 K9K2G16Q0M-PCB0,PIB0 K9W4G08U1M-PCB0,PIB0,ECB0,EIB0 K9W4G16U1M-PCB0,PIB0,ECB0,EIB0 Errata is added.(Front Page)-K9K2GXXQ0M tWC tWP tWH tRC tREH tRP tREA tCEA Specification 45 25 15 50 15 25 30 45 Relaxed value 80 60 20 80 20 60 60 75 1. The 3rd Byte ID after 90h ID read command is don’ t cared. The 5th Byte ID after 90h ID read command is deleted. New package dimension is added.(K9W4GXXU1M-KXB0/EXB0) 1. Min valid block of K9W4GXXU1M-YCB0/YIB0 is changed . - min. 4036 --> 4016 2. Note is added. (VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.) Draft Date Mar. 13.2003 Remark Preliminary 1.0 Mar. 17.2003 Preliminary 1.1 Apr. 9. 2003 Preliminary 1.2 1.3 Apr. 15. 2003 Apr. 18. 2003 Preliminary Preliminary 1.4 AC parameters are changed-K9K2GXXQ0M tWC tWP tWH tRC tREH tRP tREA tCEA Before 45 25 15 50 15 25 30 45 After 80 60 20 80 20 60 60 75 1. Added Addressing method for program operation 1. Add the Protrusion/Burr value in WSOP1 PKG Diagram. 1. PKG(TSOP1, WSOP1) Dimension Change Aug. 5. 2003 Preliminary 1.5 1.6 1.7 Jan. 27. 2004 Apr. 24. 2004 May. 19. 2004 The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near your office. 2 K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M FLASH MEMORY 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory PRODUCT LIST Part Number K9K2G08Q0M-Y,P K9K2G16Q0M-Y,P K9XXG08UXM-Y,P,K,E K9XXG16UXM-Y,P,K,E K9K2G08U0M-V,F 2.7 ~ 3.6V Vcc Range 1.7 ~ 1.95V Organization X8 X16 X8 X16 X8 WSOP1 TSOP1 PKG Type FEATURES • Voltage Supply -1.8V device(K9K2GXXQ0M): 1.7V~1.95V -3.3V device(K9XXGXXUXM): 2.7 V ~3.6 V • Organization - Memory Cell Array -X8 device(K9K2G08X0M) : (256M + 8,192K)bit x 8bit -X16 device(K9K2G16X0M) : (128M + 4,096K)bit x 16bit - Data Register -X8 device(K9K2G08X0M): (2K + 64)bit x8bit -X16 device(K9K2G16X0M): (1K + 32)bit x16bit - Cache Register -X8 device(K9K2G08X0M): (2K + 64)bit x8bit -X16 device(K9K2G16X0M): (1K + 32)bit x16bit • Automatic Program and Erase - Page Program -X8 device(K9K2G08X0M): (2K + 64)Byte -X16 device(K9K2G16X0M): (1K + 32)Word - Block Erase -X8 device(K9K2G08X0M): (128K + 4K)Byte -X16 device(K9K2G16X0M): (64K + 2K)Word • Page Read Operation - Page Size - X8 device(K9K2G08X0M): 2K-Byte - X16 device(K9K2G16X0M) : 1K-Word - Random Read : 25µs(Max.) - Serial Access 1.8V device(K9K2GXXQ0M): 80ns(Min.) 3.3V device(K9XXGXXUXM): 50ns(Min.) • Fast Write Cycle Time - Program time : 300µs(Typ.) - Block Erase Time : 2ms(Typ.) • Command/Address/Data Multiplexed I/O Port • Hardware Data Protection - Program/Erase Lockout During Power Transitions • Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles - Data Retention : 10 Years • Command Register Operation • Ca.


K9K2G08Q0M K9K2G08Q0M-P K9K2G08Q0M-PCB0


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