K9K1G16Q0A

K9K1G08Q0A K9K1G16Q0A K9K1G08U0A K9K1G16U0A Preliminary FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note is added. (VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.) 2. 63FBGA,1.8V product is added. K9K1GXXQ0A-GCB0,GIB0,JCB0,JIB0 Errata is deleted. AC parameters are changed. Before After tWC tWH tWP tRC tREH tRP tREA tCEA 45 15 25 50 15 25 30 45 60 20 40 60 20 40 40 55 Draft Date Mar. 17th 2003 Jun. 4th 2003 Remark Preliminary Preliminary Aug. 1st 2003 0.2 Preliminary Note : For more detailed features and specifications including FAQ, please refer to Samsung’ s Flash web site. http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near your office. 1 K9K1G08Q0A K9K1G16Q0A K9K1G08U0A K9K1G16U0A Preliminary FLASH MEMORY 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory PRODUCT LIST Part Number K9K1G08Q0A-G,J K9K1G16Q0A-G,J K9K1G08U0A-Y,P K9K1G08U0A-G,J K9K1G08U0A-V,F K9K1G16U0A-Y,P K9K1G16U0A-G,J 2.7 ~ 3.6V X16 X8 Vcc Range 1.70 ~ 1.95V Organization X8 X16 TSOP1 FBGA WSOP1 TSOP1 FBGA PKG Type FBGA FE...