K9F8008W0M-TCB0

K9F8008W0M-TCB0, K9F8008W0M-TIB0 Document Title 1M x 8 bit NAND Flash Memory FLASH MEMORY Revision History Revision No. 0.0 1.0 History Data Sheet 1997 Data Sheet 1998 1. Changed tBERS parameter : 5ms(Typ.) → 2ms(Typ.) 10ms(Max.) → 4ms(Max.) 2. Changed tPROG parameter : 1.5ms(Max.) → 1.0ms(Max.) Data sheet 1998 1. Cjanged DC and Operating Characteristics Parameter Burst Read Operating Current Program Eraase Stand-by Current (CMOS) Input Leakage Current Output Leakage Current Vcc=2.7V~3.6V Typ 10 → 5 10 → 5 10 → 5 5 → 10 Max 20 → 10 20 → 10 20 → 10 50 10 → ±10 10 → ±10 Vcc=3.6V~5.5V Typ 15 → 10 15 → 10 15 → 10 10 Max 30 → 20 30 → 20 30 → 20 100 → 50 10 → ±10 10 → ±10 µA mA Unit Draft Date April 10th 1997 April 10th 1998 Remark Advance Preliminary 1.1 July 14th 1998 Final 1.2 Data Sheet 1999 t care mode during the data-loading and reading 1) Added CE don’ 1) Revised real-time map-out algorithm(refer to technical notes) Changed device name - KM29W8000T -> K9F8008W0M-TCB0 - KM29W8000IT -> K9F8008W0M-TIB0 April 10th 1999 Final 1.3 1.4 July 23th 1999 Sep. 15th 1999 Final Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you. 1 K9F8008W0M-TCB0, K9F8008W0M-TIB0 1M x 8 Bit NAND Flash Memory FEATURES ...