64M x 8 Bit NAND Flash Memory
K9F1208Q0B K9F1208D0B K9F1208U0B
Advance FLASH MEMORY
Document Title
64M x 8 Bit NAND Flash Memory
Revision History
R...
Description
K9F1208Q0B K9F1208D0B K9F1208U0B
Advance FLASH MEMORY
Document Title
64M x 8 Bit NAND Flash Memory
Revision History
Revision No. History
0.0 Initial issue.
Draft Date
Apr. 24th 2004
Remark
Advance
Note : For more detailed features and specifications including FAQ, please refer to Samsung’ s Flash web site. http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you.
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K9F1208Q0B K9F1208D0B K9F1208U0B
Advance FLASH MEMORY
64M x 8 Bit NAND Flash Memory
PRODUCT LIST
Part Number K9F1208Q0B-D,H K9F1208D0B-Y,P K9F1208D0B-D,H K9F1208U0B-Y,P K9F1208U0B-D,H K9F1208U0B-V,F 2.7 ~ 3.6V Vcc Range 1.70 ~ 1.95V 2.4 ~ 2.9V PKG Type FBGA TSOP1 FBGA TSOP1 FBGA WSOP1
FEATURES
Voltage Supply - 1.8V device(K9F1208Q0B) : 1.70~1.95V - 2.65V device(K9F1208D0B) : 2.4~2.9V - 3.3V device(K9F1208U0B) : 2.7 ~ 3.6 V Organization - Memory Cell Array : (64M + 2048K)bit x 8 bit - Data Register : (512 + 16)bit x 8bit Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (16K + 512)Byte Page Read Operation - Page Size : (512 + 16)Byte - Random Access : 15µs(Max.) - Serial Page Access : 50ns(Min.) Fast Write Cycle Time - Program time : ...
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