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K91G08Q0M Dataheets PDF



Part Number K91G08Q0M
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
Datasheet K91G08Q0M DatasheetK91G08Q0M Datasheet (PDF)

K817P/ K827PH/ K847PH Vishay Telefunken Optocoupler with Phototransistor Output Description The K817P/ K827PH/ K847PH consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 4-lead up to 16-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications Programmable logic controllers, modems, answering machines, gen.

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K817P/ K827PH/ K847PH Vishay Telefunken Optocoupler with Phototransistor Output Description The K817P/ K827PH/ K847PH consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 4-lead up to 16-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications Programmable logic controllers, modems, answering machines, general applications 14925 Features D Endstackable to 2.54 mm (0.1’) spacing D DC isolation test voltage VIO = 5 kV D Low coupling capacitance of typical 0.3 pF D Current Transfer Ratio (CTR) selected into groups Coll. Emitter D Low temperature coefficient of CTR D Wide ambient temperature range D Underwriters Laboratory (UL) 1577 recognized, file number E-76222 Anode Cath. 4 PIN 8 PIN 16 PIN D CSA (C–UL) 1577 recognized, file number E-76222 – Double Protection D Coupling System U C Order Instruction Ordering Code K817P K827PH K847PH K817P1 K817P2 K817P3 K817P4 K817P5 K817P6 K817P7 K827P8 K817P9 CTR Ranking 50 to 600% 50 to 600% 50 to 600% 40 to 80% 63 to 125% 100 to 200% 160 to 320% 50 to 150% 100 to 300% 80 to 160% 130 to 260% 200 to 400% Remarks 4 Pin = Single channel 8 Pin = Dual channel 16 Pin = Quad channel 4 Pin = Single channel 4 Pin = Single channel 4 Pin = Single channel 4 Pin = Single channel 4 Pin = Single channel 4 Pin = Single channel 4 Pin = Single channel 4 Pin = Single channel 4 Pin = Single channel Rev. A2, 11–Jan–99 177 13929 K817P/ K827PH/ K847PH Vishay Telefunken Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IF IFSM PV Tj Value 6 60 1.5 100 125 Unit V mA A mW °C tp ≤ 10 ms Tamb ≤ 25°C Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector current Peak collector current Power dissipation Junction temperature Test Conditions Symbol VCEO VECO IC ICM PV Tj Value 70 7 50 100 150 125 Unit V V mA mA mW °C tp/T = 0.5, tp ≤ 10 ms Tamb ≤ 25°C Coupler Parameter Test Conditions AC isolation test voltage (RMS) t = 1 min Total power dissipation Tamb ≤ 25°C Operating ambient temperature range Storage temperature range Soldering temperature 2 mm from case, t ≤ 10 s 1) Related to standard climate 23/50 DIN 50014 Symbol VIO 1) Ptot Tamb Tstg Tsd Value 5 250 –40 to +100 –55 to +125 260 Unit kV mW °C °C °C 178 Rev. A2, 11–Jan–99 K817P/ K827PH/ K847PH Vishay Telefunken Electrical Characteristics (Tamb = 25°C) Input (Emitter) Parameter Forward voltage Junction capacitance Test Conditions IF = 50 mA VR = 0 V, f = 1 MHz Symbol VF Cj Min. Typ. 1.25 50 Max. 1.6 Unit V pF Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector dark current Test Conditions IC = 100 mA IE = 100 mA VCE = 20 V, IF = 0, E = 0 Symbol VCEO VECO ICEO Min. 70 7 Typ. Max. Unit V V nA 100 Coupler Parameter Collector emitter saturation voltage Cut-off frequency Coupling capacitance Test Conditions IF = 10 mA, IC = 1 mA IF = 10 mA, VCE = 5 V, RL = 100 W f = 1 MHz Symbol VCEsat fc Ck Min. Typ. Max. 0.3 Unit V kHz pF 100 0.3 Current Transfer Ratio (CTR) Parameter IC/IF Test Conditions VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 10 mA VCE = 5 V, IF = 10 mA VCE = 5 V, IF = 10 mA VCE = 5 V, IF = 10 mA VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 5 mA Type K817P K827PH K847PH K817P1 K817P2 K817P3 K817P4 K817P5 K817P6 K817P7 K817P8 K817P9 Symbol CTR CTR CTR CTR CTR CTR CTR CTR CTR CTR CTR CTR Min. 0.5 0.5 0.5 0.4 0.63 1.0 1.6 0.5 1.0 0.8 1.3 2.0 Typ. Max. 6.0 6.0 6.0 0.8 1.25 2.0 3.2 1.5 3.0 1.6 2.6 4.0 Unit Rev. A2, 11–Jan–99 179 K817P/ K827PH/ K847PH Vishay Telefunken Switching Characteristics Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time Test Conditions VS = 5 V, IC = 2 mA, RL = 100 W ( (see figure g 1) ) Symbol td tr tf ts ton toff ton toff Typ. 3.0 3.0 4.7 0.3 6.0 5.0 9.0 18.0 Unit ms ms ms ms ms ms ms ms VS = 5 V, IF = 10 mA, RL = 1 kW ( (see figure g 2) ) 0 IF IF +5V IC = 2 mA ; Adjusted through input amplitude 96 11698 RG = 50 W tp = 0.01 T tp = 50 ms Channel I Channel II Oscilloscope RL = 1 M W CL = 20 pF IF 0 tp IC 100% 90% t 50 95 10804 W 100 W Figure 1. Test circuit, non-saturated operation 0 IF RG = 50 W tp 0.01 T tp = 50 ms IF = 10 mA +5V IC 10% 0 tr td ton ts toff pulse duradelay time rise time turn-on time ts tf toff (= ts + tf) tf t + Channel I 50 W 95 10843 Oscilloscope RL ≥ 1 MW CL ≤ 20 pF Channel II 1 kW tp tion td tr ton (= td + tr) storage time fall time turn-off time Figure 2. Test circuit, saturated operation Figure 3. Switching times 180 Rev. A2, 11–Jan–99 K817P/ K827PH/ K847PH Vishay Telefunken Typical Characteristics (Tamb = 25_C, unless o.


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