K6R1016V1D

K6R1016V1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. for AT&T CMOS SRAM Revision History Rev. No. Rev. 0.0 Rev. 0.1 Rev. 0.2 Rev. 1.0 History Initial document. Speed bin modify Current modify 1. Delete 12ns speed bin. 2. Change Icc for Industrial mode. Item Previous 8ns 100mA ICC(Industrial) 10ns 85mA 1. Add tBA,tBLZ,tBHZ,tBW AC parematers. 1. Correct read cycle timing diagram(2). Draft Data May. 11. 2001 June. 18. 2001 September. 9. 2001 December. 18. 2001 Current 90mA 75mA February. 14. 2002 June. 19. 2002 Final Final Remark Preliminary Preliminary Preliminary Final Rev. 2.0 Rev. 3.0 The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- Revision 3.0 June 2002 K6R1016V1D 1Mb Async. Fast SRAM Ordering Information Org. 256K x4 Part Number K6R1004C1D-JC(I) 10/12 K6R1004V1D-JC(I) 08/10 128K x8 K6R1008C1D-J(T)C(I) 10/12 K6R1008V1D-J(T)C(I) 08/10 64K x16 K6R1016C1D-J(T,E)C(I) 10/12 K6R1016V1D-J(T,E)C(I) 08/10 VDD(V) 5 3.3 5 3.3 5 3.3 Speed ( ns ) 10/12 8/10 10/12 8/10 10/12 8/10 J : 32-SOJ T : 32-TSOP2 J : 44-SOJ T : 44-TSOP2 E : 48-TBGA for AT&T CMOS SRAM PKG J : 32-...