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K6F1616T6B-TF70 Dataheets PDF



Part Number K6F1616T6B-TF70
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Datasheet K6F1616T6B-TF70 DatasheetK6F1616T6B-TF70 Datasheet (PDF)

K6F1616T6B Family Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial draft Revised - Changed Isb1(max.) from 25uA to 15uA Finalized - Added Package Type ’48-TBGA - 7.00x7.00’ Draft Date May 21, 2003 June 17, 2003 Remark Preliminary Preliminary 1.0 August 13, 2003 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifi.

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K6F1616T6B Family Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial draft Revised - Changed Isb1(max.) from 25uA to 15uA Finalized - Added Package Type ’48-TBGA - 7.00x7.00’ Draft Date May 21, 2003 June 17, 2003 Remark Preliminary Preliminary 1.0 August 13, 2003 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.0 August 2003 K6F1616T6B Family FEATURES • Process Technology: Full CMOS • Organization: 1M x16 • Power Supply Voltage: 2.7~3.6V • Low Data Retention Voltage: 1.5V(Min) • Three State Outputs • Package Type: 48-TSOP1-1220F, 48-TBGA - 7.00x7.00 CMOS SRAM GENERAL DESCRIPTION The K6F1616T6B families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges. The families also support low data retention voltage for battery back-up operation with low data retention current. 1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM PRODUCT FAMILY Power Dissipation Product Family Operating Temperature Vcc Range Speed Standby (ISB1, Typ.) 5µA2) Operating (ICC1, Max) 5mA PKG Type 48-TSOP1-1220F 48-TBGA - 7.00x7.00 K6F1616T6B-F Industrial(-40~85°C) 2.7~3.6V 551)/70ns 1. The parameter is measured with 30pF test load. 2. Typical value is measured at VCC=3.3V, TA=25°C and not 100% tested. PIN DESCRIPTION A15 A14 A13 A12 A11 A10 A9 A8 A19 NC WE CS2 NC UB LB A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 NC Vss I/O16 I/O8 I/O15 I/O7 I/O14 I/O6 I/O13 I/O5 Vcc I/O12 I/O4 I/O11 I/O3 I/O10 I/O2 I/O9 I/O1 OE Vss CS1 A0 FUNCTIONAL BLOCK DIAGRAM Clk gen. Precharge circuit. Vcc Vss Row Addresses 48-TSOP1-1220F Row select Memory Cell Array I/O1~I/O8 Data cont Data cont Data cont I/O Circuit Column select I/O9~I/O16 1 2 3 4 5 6 A LB OE A0 A1 A2 CS2 Column Addresses B I/O9 UB A3 A4 CS1 I/O1 CS1 C I/O10 I/O11 A5 A6 I/O2 I/O3 CS2 OE WE Control Logic D Vss I/O12 A17 A7 I/O4 Vcc UB LB E Vcc I/O13 Vss A16 I/O5 Vss Name F I/O15 I/O14 A14 A15 I/O6 I/O7 Function Name Vcc Vss UB LB NC Function Power Ground Upper Byte(I/O9~16) Lower Byte(I/O1~8) No Connection CS1, CS2 Chip Select Inputs OE Output Enable Input Write Enable Input Address Inputs G I/O16 A19 A12 A13 WE I/O8 WE A0~A19 H A18 A8 A9 A10 A11 NC I/O1~I/O16 Data Inputs/Outputs 48-TBGA: Top View (Ball Down) SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. 2 Revision 1.0 August 2003 K6F1616T6B Family PRODUCT LIST Industrial Temperature Pro.


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