Document
K6F1616T6B Family
Document Title
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0 0.1 Initial draft Revised - Changed Isb1(max.) from 25uA to 15uA Finalized - Added Package Type ’48-TBGA - 7.00x7.00’
Draft Date
May 21, 2003 June 17, 2003
Remark
Preliminary Preliminary
1.0
August 13, 2003
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.0 August 2003
K6F1616T6B Family
FEATURES
• Process Technology: Full CMOS • Organization: 1M x16 • Power Supply Voltage: 2.7~3.6V • Low Data Retention Voltage: 1.5V(Min) • Three State Outputs • Package Type: 48-TSOP1-1220F, 48-TBGA - 7.00x7.00
CMOS SRAM
GENERAL DESCRIPTION
The K6F1616T6B families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges. The families also support low data retention voltage for battery back-up operation with low data retention current.
1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
PRODUCT FAMILY
Power Dissipation Product Family Operating Temperature Vcc Range Speed Standby (ISB1, Typ.) 5µA2) Operating (ICC1, Max) 5mA PKG Type 48-TSOP1-1220F 48-TBGA - 7.00x7.00
K6F1616T6B-F
Industrial(-40~85°C)
2.7~3.6V
551)/70ns
1. The parameter is measured with 30pF test load. 2. Typical value is measured at VCC=3.3V, TA=25°C and not 100% tested.
PIN DESCRIPTION
A15 A14 A13 A12 A11 A10 A9 A8 A19 NC WE CS2 NC UB LB A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 NC Vss I/O16 I/O8 I/O15 I/O7 I/O14 I/O6 I/O13 I/O5 Vcc I/O12 I/O4 I/O11 I/O3 I/O10 I/O2 I/O9 I/O1 OE Vss CS1 A0
FUNCTIONAL BLOCK DIAGRAM
Clk gen. Precharge circuit.
Vcc Vss Row Addresses
48-TSOP1-1220F
Row select
Memory Cell Array
I/O1~I/O8
Data cont Data cont Data cont
I/O Circuit Column select
I/O9~I/O16
1
2
3
4
5
6
A
LB
OE
A0
A1
A2
CS2
Column Addresses
B
I/O9
UB
A3
A4
CS1
I/O1
CS1
C
I/O10
I/O11
A5
A6
I/O2
I/O3
CS2 OE WE
Control Logic
D
Vss
I/O12
A17
A7
I/O4
Vcc
UB LB
E
Vcc
I/O13
Vss
A16
I/O5
Vss
Name
F I/O15 I/O14 A14 A15 I/O6 I/O7
Function
Name Vcc Vss UB LB NC
Function Power Ground Upper Byte(I/O9~16) Lower Byte(I/O1~8) No Connection
CS1, CS2 Chip Select Inputs OE Output Enable Input Write Enable Input Address Inputs
G
I/O16
A19
A12
A13
WE
I/O8
WE A0~A19
H
A18
A8
A9
A10
A11
NC
I/O1~I/O16 Data Inputs/Outputs
48-TBGA: Top View (Ball Down)
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. 2
Revision 1.0 August 2003
K6F1616T6B Family
PRODUCT LIST
Industrial Temperature Pro.