1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B Family
Document Title
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
CMOS SRAM
Revision Hi...
Description
K6F1616T6B Family
Document Title
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0 0.1 Initial draft Revised - Changed Isb1(max.) from 25uA to 15uA Finalized - Added Package Type ’48-TBGA - 7.00x7.00’
Draft Date
May 21, 2003 June 17, 2003
Remark
Preliminary Preliminary
1.0
August 13, 2003
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.0 August 2003
K6F1616T6B Family
FEATURES
Process Technology: Full CMOS Organization: 1M x16 Power Supply Voltage: 2.7~3.6V Low Data Retention Voltage: 1.5V(Min) Three State Outputs Package Type: 48-TSOP1-1220F, 48-TBGA - 7.00x7.00
CMOS SRAM
GENERAL DESCRIPTION
The K6F1616T6B families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges. The families also support low data retention voltage for battery back-up operation with low data retention current.
1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
PRODUCT FAMILY
Power Dissipation Product Family Operating Temperature Vcc Range Speed Standby (ISB1, Typ.) 5µA2) Operating (ICC1, Max) 5mA PKG Type 48-TSOP1-1220F 48-TBGA - 7.00x7.00
K6F1616T6B-F
Industrial(-40~85°C)...
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