K5T6432YT

K5T6432YT(B)M Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Four Bank NOR Flash Memory / 32M Bit (2Mx16) UtRAM MCP MEMORY Revision History Revision No. History 1.0 Final Specification Draft Date Remark November 27, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. -1- Revision 1.0 November 2001 K5T6432YT(B)M Multi-Chip Package MEMORY 64M Bit (4Mx16) Four Bank NOR Flash Memory / 32M Bit (2Mx16) UtRAM MCP MEMORY FEATURES Power Supply voltage : 2.7 to 3.3 V Organization - Flash : 4,194,304 x 16 bit - UtRAM : 2,097,152 x 16 bit Access Time (@2.7V) - Flash : 85 ns, UtRAM : 100 ns Power Consumption (typical value) - Flash Read Current : 20 mA (@5MHz) Sequential Page Read Current : 5 mA (@5MHz) Program/Erase Current : 35 mA (Max.) Standby mode/Deep Power mode : 0.1 µA - UtRAM Operating Current : 18 mA Standby Current :120 µA Deep Power Down : 5 µA Secode(Security Code) Block : Extra 32KW Block (Flash) Block Group Protection / Unprotection (Flash) 128 words Page Program (Flash) Flash Bank Size : 4Mb / 4Mb / 28Mb / 28Mb Flash Endurance : 100,000 Program/Erase Cycles Ambient Temperature : -25 °C ~ 85°C Endurance : 100,000 Program/Erase Cycles Package :81 - ball TBGA Type - 10.8 x 10.4 mm, 0.8 mm pi...