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K4S281632D-L55 Dataheets PDF



Part Number K4S281632D-L55
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Datasheet K4S281632D-L55 DatasheetK4S281632D-L55 Datasheet (PDF)

K4S281632D CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept. 2001 K4S281632D Revision History Revision 0.0 (Mar. 06, 2001) Revision 0.1 (Sep. 06, 2001) • • CMOS SDRAM Redefined IDD1 & IDD4 in DC Characteristics Changed the Notes in Operating AC Parameter. < Before > 5. For 1H/1L, tRDL=1CLK and tDAL=1CLK+tRP is also supported . SAMSUNG recommen.

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K4S281632D CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept. 2001 K4S281632D Revision History Revision 0.0 (Mar. 06, 2001) Revision 0.1 (Sep. 06, 2001) • • CMOS SDRAM Redefined IDD1 & IDD4 in DC Characteristics Changed the Notes in Operating AC Parameter. < Before > 5. For 1H/1L, tRDL=1CLK and tDAL=1CLK+tRP is also supported . SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + tRP. < After > 5.In 100MHz and below 100MHz operating conditions, tRDL=1CLK and tDAL=1CLK + 20ns is also supported. SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + tRP. Rev. 0.1 Sept. 2001 K4S281632D 2M x 16Bit x 4 Banks Synchronous DRAM FEATURES • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation • DQM for masking • Auto & self refresh • 64ms refresh period (4K cycle) Part No. K4S281632D-TC/L55 K4S281632D-TC/L60 K4S281632D-TC/L7C K4S281632D-TC/L75 K4S281632D-TC/L1H K4S281632D-TC/L1L CMOS SDRAM GENERAL DESCRIPTION The K4S281632D is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. ORDERING INFORMATION Max Freq. 183MHz(CL=3) 166MHz(CL=3) 133MHz(CL=2) 133MHz(CL=3) 100MHz(CL=2) 100MHz(CL=3) LVTTL 54 TSOP(II) Interface Package FUNCTIONAL BLOCK DIAGRAM I/O Control LWE Data Input Register LDQM Bank Select 2M x 16 2M x 16 2M x 16 2M x 16 Refresh Counter Output Buffer Row Decoder Sense AMP Row Buffer DQi Address Register CLK ADD Column Decoder Col. Buffer Latency & Burst Length LRAS LCBR LCKE LRAS LCBR LWE LCAS Programming Register LWCBR LDQM Timing Register CLK CKE CS RAS CAS WE LDQM UDQM * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept. 2001 K4S281632D PIN CONFIGURATION (Top view) VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 VDD LDQM WE CAS RAS CS BA0 BA1 A10/AP A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 VSS DQ15 VSSQ DQ14 DQ13 VDDQ DQ12 DQ11 VSSQ DQ10 DQ9 VDDQ DQ8 VSS N.C/RFU UDQM CLK CKE N.C A11 A9 A8 A7 A6 A5 A4 VSS CMOS SDRAM 54Pin TSOP (II) (400mil x 875mil) (0.8 mm Pin pitch) PIN FUNCTION DESCRIPTION Pin CLK CS Name System clock Chip select Input Function Active on the positive going edge to sample all inputs. Disables or enables device operation by masking or enabling all inputs except CLK, CKE and DQM Masks system clock to freeze operation from the next clock cycle. CKE should be enabled at least one cycle prior to new command. Disable input buffers for power down in standby. Row/column addresses are multiplexed on the same pins. Row address : RA0 ~ RA11, Column address : CA0 ~ CA8 Selects bank to be activated during row address latch time. Selects bank for read/write during column address latch time. Latches row addresses on the positive going edge of the CLK with RAS low. Enables row access & precharge. Latches column addresses on the positive going edge of the CLK with CAS low. Enables column access. Enables write operation and row precharge. Latches data in starting from CAS, WE active. Makes data output Hi-Z, tSHZ after the clock and masks the output. Blocks data input when L(U)DQM active. Data inputs/outputs are multiplexed on the same pins. Power and ground for the input buffers and the core logic. Isolated power supply and ground for the output buffers to provide improved noise immunity. This pin is recommended to be left No Connection on the device. CKE Clock enable A0 ~ A11 BA0 ~ BA1 RAS CAS WE L(U)DQM DQ0 ~ 15 Address Bank select address Row address strobe Column address strobe Write enable Data input/output mask Data input/output Power supply/ground Data output power/ground No connection /reserved for future use VDD/VSS VDDQ/VSSQ N.C/RFU Rev. 0.1 Sept. 2001 K4S281632D ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to Vss Voltage on VDD supply relative to Vss Storage temperature Power dissipation Short circuit current Symbol VIN, VOUT VDD, VDDQ TSTG PD IOS Value -1.0 ~ 4.6 -1.0 ~ 4.6 -55 ~ +150 1 50 CMOS SDRAM Unit V V °C W mA Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" .


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