DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D186
JC337 NPN general purpose transistor
Product specification S...
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D186
JC337
NPN general purpose
transistor
Product specification Supersedes data of 1997 Mar 10 1999 Apr 27
Philips Semiconductors
Product specification
NPN general purpose
transistor
FEATURES Low current (max. 500 mA) Low voltage (max. 45 V). APPLICATIONS General purpose switching and amplification, e.g. driver and output stages of audio amplifiers.
1 handbook, halfpage
JC337
PINNING PIN 1 2 3 base collector emitter DESCRIPTION
DESCRIPTION
NPN transistor in a TO-92; SOT54 plastic package.
PNP complement: JC327.
2 3
2 1 3
MAM259
Fig.1
Simplified outline TO-92; SOT54 and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. 50 45 5 500 1 200 625 +150 150 +150 V mA A mA mW °C °C °C UNIT
1999 Apr 27
2
Philips Semiconductors
Product specification
NPN general purpose
transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. ...