4N22 4N23 4N24
JAN, JANTX, JANTXV, SINGLE CHANNEL OPTOCOUPLERS
Mii
OPTOELECTRONIC PRODUCTS DIVISION
Features: • • • • • Overall current gain...1.5 typical (4N24) Base lead provided for conventional transistor biasing Rugged package High gain, high voltage transistor +1kV electrical isolation
Applications: • • • • • Eliminate ground loops Level shifting Line receiver Switching power supplies Motor control
DESCRIPTION Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed metal case. The 4N22, 4N23 and 4N24’s can be tested to customer specifications, as well as to MIL-PRF-19500 JAN, JANS, JANTX and JANTXV quality levels.
*ABSOLUTE MAXIMUM RATINGS Input to Output Voltage........................................................................................................................................................ ±1kV Emitter-Collector Voltage.......................................................................................................................................................... 4V Collector-Emitter Voltage (VCEO, IF = 0) .................................................................................................................................... 35V Collector-Base Voltage (VCEO, IF = 0) ....................................................................................................................................... 35V Reverse Input Voltage ............................................................................................................................................................. 2V Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1) ....................................40mA Peak Forward Input Current (Value applies for tw < 1µs PRR < 300 pps) .............................................................................. 1A Continuous Collector Current ..............................................................................................................................................50mA Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2) ................................300mW Storage Temperature..........................................................................................................................................-65°C to +125°C Operating Free-Air Temperature Range ............................................................................................................-55°C to +125°C Lead Solder Temperature (1/16” (1.6mm) from case for 10 seconds) .............................................................................. 240°C Notes: 1. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C above 65°C. 2. Derate linearly to 125°C free-air temperature at the rate of 5 mW/°C above 65°C. Package Dimensions * JEDEC registered data
0.040 [1.02] MAX. 0.305 [7.75] 0.335 [8.51]
6 LEADS
5 6 7 2 1
Schematic Diagram
C
3
0.016Ø [0.41] 0.019Ø [0.48] 0.500 [12.70] MIN. 0.155 [3.94] 0.185 [4.70]
0.022Ø [5.08]
3
0.045 [1.14] 0.029 [0.73]
5
A E 1
45° 0.034 [0.864] 0.028 [0.711] TO5
7
K
B
2
NOTE: ALL LINEAR DIMENSIONS ARE IN INCHES (MILLIMETERS)
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL:
[email protected]
3-7
4N22, 4N23, and 4N24
JAN, JANTX, JANTXV, SINGLE CHANNEL OPTOCOUPLERS
*ELECTRICAL CHARACTERISTICS INPUT LED TA = 25°C Unless otherwise specified PARAMETER SYMBOL MIN MAX UNITS TEST CONDITIONS
Input Diode Static Reverse Current Input Diode Static Forward Voltage -55°C +25°C +125°C IR VF 1 0.8 0.7 100 1.5 1.3 1.2 µA V VR = 2V IF = 10mA
NOTE
*OUTPUT TRANSISTOR TA = 25°C Unless otherwise specified PARAMETER SYMBOL MIN
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage V(BR)CBO V(BR)CEO V(BR)EBO 35 35 4
MAX
UNITS
V V V
TEST CONDITIONS
IC = 100µA, IB = 0, IF = 0 IC = 1mA, IB = 0, IF = 0 IC = 0, IE = 100µA, IF = 0
NOTE
*COUPLED CHARACTERISTICS PARAMETER
On State Collector Current
TA = 25°C Unless otherwise specified
SYMBOL
IC(ON)
MIN
0.15 0.2 0.4 2.5 6 10 1 2.5 4 1 2.5 4
MAX
UNITS
mA
TEST CONDITIONS
VCE = 5V, IB = 0, IF = 2mA
NOTE
4N22 4N23 4N24 4N22 4N23 4N24 4N22 4N23 4N24 4N22 4N23 4N24 +25°C 4N22 4N23 4N24 ALL ALL 4N22 4N23 4N24 4N22 4N23 4N24
On State Collector Current
mA VCE = 5V, IB = 0, IF = 10mA mA VCE = 5V, IB = 0, IF = 10mA mA VCE = 5V, IB = 0, IF = 10mA 100 100 0.3 0.3 0.3 5 15 15 20 15 15 20 nA
µA
IC(ON)
On State Collector Current -55°C On State Collector Current +100°C Off State Collector Current
IC(ON)
IC(ON) IC(OFF) IC(OFF) VCE(SAT) VCE(SAT) VCE(SAT) RI-O CI-O tr tr tr tf tf tf
VCE = 20V, IB = 0, IF = 0mA VCE = 20V, IB = 0, IF = 0mA IC = 2.5mA, IB = 0, IF = 20mA IC = 5mA, IB = 0, IF = 20mA IC = 10mA, IB = 0, IF = 20mA VIN-OUT = 1kV 1 1 F = 1MHz, VIN-OU.