PD-90424D
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET®TRANSISTORS THRU-HOLE-TO-205AF (TO-39)
Product Summary
Part Num...
PD-90424D
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET®
TRANSISTORS THRU-HOLE-TO-205AF (TO-39)
Product Summary
Part Number BVDSS RDS(on)
IRFF210
200V 1.5Ω
ID 2.25A
IRFF210 JANTX2N6784 JANTXV2N6784
REF:MIL-PRF-19500/556
200V, N-CHANNEL
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET
transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low onstate resistance combined with high transconductance.
The HEXFET
transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters.
They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
TO-39
Features:
n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling n ESD Rating: Class 1A per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C
IDM PD @ TC = 25°C
Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor
VGS EAS IAR EAR dv/dt
TJ TSTG
Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature...