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JANSR2N7399

Part Number	JANSR2N7399
Manufacturer	Intersil Corporation
Description	11A/ 100V/ 0.210 Ohm/ Rad Hard/ N-Channel Power MOSFET
Published	Apr 7, 2005
Detailed Description	JANSR2N7399 Formerly FSS130R4 June 1998 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET Description The Discrete...
Datasheet	JANSR2N7399 PDF File

Overview

JANSR2N7399 Formerly FSS130R4 June 1998 11A, 100V, 0.
210 Ohm, Rad Hard, N-Channel Power MOSFET Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments.
The dose rate and neutron tolerance necessary for military applications have not been sacriﬁced.
The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Chan...

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