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JANS1N4148-1 Dataheets PDF



Part Number JANS1N4148-1
Manufacturers Microsemi Corporation
Logo Microsemi Corporation
Description PERFORMANCE SPECIFICATION
Datasheet JANS1N4148-1 DatasheetJANS1N4148-1 Datasheet (PDF)

The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 September 2001. INCH POUND MIL-PRF-19500/116L 8 June 2001 SUPERSEDING MIL-PRF-19500/116K 28 February 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N914, 1N914UR, 1N4148-1, 1N4148UR-1, 1N4148UB, 1N4148UB2, 1N4148UB2R, 1N4148UBCA, 1N4148UBCC, 1N4148UBCD, 1N4531, AND 1N4531UR, JAN, JANTX, JANTXV, JANHC, AND JANKC JANS1N4148-1 (see 6.4). Device t.

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The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 September 2001. INCH POUND MIL-PRF-19500/116L 8 June 2001 SUPERSEDING MIL-PRF-19500/116K 28 February 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N914, 1N914UR, 1N4148-1, 1N4148UR-1, 1N4148UB, 1N4148UB2, 1N4148UB2R, 1N4148UBCA, 1N4148UBCC, 1N4148UBCD, 1N4531, AND 1N4531UR, JAN, JANTX, JANTXV, JANHC, AND JANKC JANS1N4148-1 (see 6.4). Device types 1N914 and 1N4531 are inactive for new design. This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for silicon, diffused, switching diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device. 1.2 Physical dimensions. See figures 1 (similar to DO-35), 2, 3, 4, and 5. 1.3 Maximum ratings. Type V(BR) VRWM Io TA = 25qC mA 75 (1) 125 (2) 200 (3) 200 (3) IFSM tp = 1/120 s A (pk) 1 1 2 2 TSTG Top Z6JX R6JL R6JC V dc 1N914, UR 1N4531, UR 1N4148-1, UR-1 1N4148UB, 1N4148UB2, 1N4148UB2R, 1N4148UBCA, 1N4148UBCC, 1N4148UBCD, 100 100 100 100 V (pk) 75 75 75 75 qC -65 to +200 -65 to +200 -65 to +200 -65 to +200 qC -65 to +175 -65 to +175 -65 to +200 -65 to +200 qC/W 70 70 70 70 qC/W 250 (leaded) 100(UR) qC/W N/A N/A N/A 150 (1) Derate at 0.5 mA/GC above TA = 25GC. (2) Derate at 0.83 mA/GC above TA = 25GC. (3) Derate at 1.14 mA/GC above TA = 25GC. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/116L 1.4 Primary electrical characteristics at TA = +25GC, unless otherwise indicated. Type (1) IF mA dc 1N914 1N4148-1 1N4531 10 10 10 VF1 V dc 0.8 0.8 0.8 IF mA dc 50 100 100 VF2 V dc 1.2 1.2 1.2 IR1 at VR = 20 V dc IR2 at VR = 75 V dc nA dc 25 25 25 2A dc 0.5 0.5 0.5 Type (1) IR3 at VR = 20 V dc TA = 150GC 2A dc 35 35 35 IR4 at VR = 75 V dc TA = 150GC 2A dc 75 75 75 tfr at Vfr = 5.0 V dc (pk) and IF = 50 mA dc ns 20 20 20 trr ns 5 5 5 1N914 1N4148-1 1N4531 (1) Electrical characteristics for surface mount devices are equivalent to the corresponding non-surface mount devices unless otherwise noted. 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 STANDARD DEPARTMENT OF DEFENSE MIL-STD-750 Test Methods for Semiconductor Devices. Semiconductor Devices, General Specification for. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2 MIL-PRF-19500/116L Types Ltr 1N4148-1 1N914 BL BD LL LD BL BD LL LD Dimensions Inches Min Max .140 .180 .056 .075 1.000 1.500 .018 .022 .080 .120 .050 .075 1.000 1.500 .018 .022 Millimeters Min Max 3.56 4.57 1.42 1.90 25.40 38.10 0.46 0.56 2.03 3.05 1.27 1.90 25.40 38.10 0.46 0.56 Notes 1, 2 3 4 5 4 5 1N4531 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. Ferrule is optional on types 1N4148-1 and 1N4531 for dimension BL. 4. The minimum dimension of BD shall apply over at least .075 (1.90 mm) of dimension BL. 5. The specified lead diameter applies in the zone between .050 (1.27 mm) for 1N914, and 1N4148-1, and .010 (0.25mm) for 1N4531 from the diode body to the end of the lead. Outside of this zone the lead shall not exceed BD. FIGURE 1. Semiconductor device, diode, types 1N914, 1N4148-1, and 1N4531. 3 MIL-PRF-19500/116L Symbol Inches BD ECT BL S Min .063 ..


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