S6785G

S6785G TOSHIBA HIGH SPEED THYRISTOR SILICON PLANAR TYPE S6785G HIGH SPEED SWITCHING AND CONTROL APPLICATIONS Unit: mm MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off−State Voltage and Repetitive Peak Reverse Voltage Non−Repetitive Peak Reverse Voltage (Non−Repetitive <5ms, Tj = 0~125°C) Average On−State Current (Half Sine Waveform) R.M.S On−State Current Peak One Cycle Surge On−State Current (Non−Repetitive) I t Limit Value Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range 2 SYMBOL VDRM VRRM VRSM IT (AV) IT (RMS) ITSM I t PGM PG (AV) VFGM VRGM IGM Tj Tstg 2 RATING 400 UNIT V 500 V 3 4.7 60 (50Hz) 66 (60Hz) 18 5 0.5 10 −6 2 −40~125 −40~125 A A A A s W W V V A °C °C 2 JEDEC JEITA TOSHIBA Weight: 1.7 g ― ― 13−10H1B 1 2001-07-10 S6785G ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current and Repetitive Peak Reverse Current Peak On−State Voltage Gate Trigger Voltage Gate Trigger Current Gate Non−Trigger Voltage Gate Non−Trigger Current Turn−On Time Turn−Off Time Critical Rate of Rise of Off−State Voltage Holding Current Thermal Resistance SYMBOL IDRM IRRM VTM VGT IGT VGD IGD tgt tq dv / dt IH Rth (j−c) TEST CONDITION VDRM =VRRM = Rated, Tj = 125°C ITM = 20A VD = 6V, RL = 10Ω MIN. ― ― ― ― ― 0.2 0.2 ― ― 100 ― ― MAX. 1.0 2.0 2.0 1.5 25.0 ― ― 3.0 3.5 ― 80.0 4.0 UNIT mA V V mA V mA µs µs V / µs mA °C / ...