DatasheetsPDF.com

S595TRW Dataheets PDF



Part Number S595TRW
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage
Datasheet S595TRW DatasheetS595TRW Datasheet (PDF)

S595T/S595TR/S595TRW Vishay Telefunken MOSMIC® for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and VHF- tuner with 5 V supply voltage. AGC RF in C block C block G2 G1 S D RF out C block 94 9296 RFC VDD Features D D D D Integrated gate protection diodes Low noise figure High gain Biasing network on chip D Improved cross modulati.

  S595TRW   S595TRW


Document
S595T/S595TR/S595TRW Vishay Telefunken MOSMIC® for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and VHF- tuner with 5 V supply voltage. AGC RF in C block C block G2 G1 S D RF out C block 94 9296 RFC VDD Features D D D D Integrated gate protection diodes Low noise figure High gain Biasing network on chip D Improved cross modulation at gain reduction D High AGC-range D SMD package 2 1 1 2 94 9279 13 579 94 9278 95 10831 3 4 4 3 S595T Marking: 595 Plastic case (SOT 143) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 S595TR Marking: 59R Plastic case (SOT 143R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 1 2 13 654 13 566 4 3 S595TRW Marking: W59 Plastic case (SOT 343R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 Document Number 85049 Rev. 4, 20-Jan-99 www.vishay.de • FaxBack +1-408-970-5600 1 (9) S595T/S595TR/S595TRW Vishay Telefunken Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Gate 1/Gate 2 - source voltage Total power dissipation Channel temperature Storage temperature range Test Conditions Symbol Value VDS 8 ID 30 ±IG1/G2SM 10 ±VG1/G2SM 6 Ptot 200 TCh 150 Tstg –55 to +150 Unit V mA mA V mW °C °C Tamb ≤ 60 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthChA Value 450 Unit K/W Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Gate 1 - source breakdown voltage Gate 2 - source breakdown voltage Gate 1 - source leakage current Gate 2 - source leakage current Drain current Self-biased operating current Gate 2 - source cut-off voltage Test Conditions ±IG1S = 10 mA, VG2S = VDS = 0 ±IG2S = 10 mA, VG1S = VDS = 0 +VG1S = 5 V, VG2S = VDS = 0 –VG1S = 5 V, VG2S = VDS = 0 ±VG2S = 5 V, VG1S = VDS = 0 VDS = 5 V, VG1S = 0, VG2S = 4 V VDS = 5 V, VG1S = nc, VG2S = 4 V VDS = 5 V, VG1S = nc, ID = 20 mA Symbol Min ±V(BR)G1SS 7 ±V(BR)G2SS +IG1SS –IG1SS ±IG2SS IDSS IDSP VG2S(OFF) 50 9 7 Typ Max Unit 10 V 10 50 100 20 500 18 V mA mA nA mA mA V 13 1.0 Caution for Gate 1 switch-off mode: No external DC-voltage on Gate 1 in active mode! Switch-off at Gate 1 with VG1S < 0.7 V is feasible. Using open collector switching transistor (inside of PLL), insert 10 kW collector resistor. www.vishay.de • FaxBack +1-408-970-5600 2 (9) Document Number 85049 Rev. 4, 20-Jan-99 S595T/S595TR/S595TRW Vishay Telefunken Electrical AC Characteristics VDS = 5 V, VG2S = 4 V, f = 1 MHz , Tamb = 25_C, unless otherwise specified Parameter Forward transadmittance Gate 1 input capacitance Feedback capacitance Output capacitance Power g gain AGC range Noise figure g Test Conditions Symbol y21s Cissg1 Crss Coss Gps Gps DGps F F Min 28 Typ 30 2.3 25 1.1 28 21 1 1.3 Max Unit 35 mS 2.7 pF fF pF dB dB dB dB dB GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3,3 mS, GL = 1 mS, f = 800 MHz VDS = 5 V, VG2S = 1 to 4 V, f = 800 MHz GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3,3 mS, GL = 1 mS, f = 800 MHz 17 45 Common Source S–Parameters VDS = 5 V , VG2S = 4 V , Z0 = 50 W, Tamb = 25_C, unless otherwise specified S11 LOG ANG MAG dB deg –0.01 –4.6 –0.03 –9.2 –0.11 –13.8 –0.19 –18.1 –0.28 –22.6 –0.40 –26.8 –0.51 –31.1 –0.64 –35.2 –0.78 –39.3 –0.93 –43.2 –1.07 –47.1 –1.22 –50.8 –1.36 –54.4 –1.49 –58.2 –1.65 –61.5 –1.79 –65.2 –1.94 –68.6 –2.04 –72.0 –2.17 –75.3 –2.29 –78.7 –2.42 –82.2 –2.58 –85.2 –2.70 –88.4 –2.78 –91.6 –2.89 –94.8 –3.00 –97.7 S21 LOG ANG MAG dB deg 9.61 174.3 9.56 167.9 9.44 161.3 9.30 155.1 9.15 148.4 9.00 142.7 8.79 136.8 8.62 130.7 8.35 125.3 8.17 119.7 7.94 114.2 7.71 108.7 7.50 104.1 7.26 99.1 7.08 94.1 6.86 89.2 6.68 84.5 6.44 79.3 6.27 74.4 6.09 70.4 5.93 65.8 5.67 61.1 5.55 56.1 5.41 51.8 5.38 47.1 5.17 42.0 S12 LOG ANG MAG dB deg –63.13 88.0 –56.88 85.3 –53.46 82.8 –51.38 80.7 –49.76 78.3 –48.70 77.3 –47.92 76.4 –47.45 76.2 –47.23 76.7 –47.10 78.4 –47.22 82.3 –46.92 88.6 –46.68 92.6 –46.47 98.8 –46.45 107.2 –45.89 116.7 –44.77 125.9 –43.51 133.0 –41.91 137.1 –40.66 138.5 –39.81 140.6 –38.89 143.6 –37.91 145.8 –36.76 148.3 –35.65 149.7 –34.63 150.1 S22 LOG ANG MAG dB deg –0.08 –2.1 –0.10 –4.3 –0.14 –6.4 –0.16 –8.6 –0.22 –11.0 –0.26 –12.9 –0.30 –15.1 –0.38 –17.1 –0.43 –18.8 –0.49 –20.6 –0.55 –22.6 –0.60 –24.6 –0.66 –26.1 –0.70 –27.9 –0.73 –29.8 –0.78 –31.7 –0.80 –33.4 –0.85 –35.4 –0.87 –37.2 –0.89 –39.1 –0.90 –41.1 –0.92 –42.6 –0.93 –44.6 –0.94 –46.7 –0.93 –49.1 –0.92 –51.0 f/MHz 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 Document Number 85049 Rev. 4, 20-Jan-99 www.vishay.de • FaxBack +1-408-970-5600 3 (9) S595T/S595TR/S595TRW Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specified) y21s – .


S595TR S595TRW S5990-01


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)