Document
S595T/S595TR/S595TRW
Vishay Telefunken
MOSMIC® for TV–Tuner Prestage with 5 V Supply Voltage
MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling.
Applications
Low noise gain controlled input stages in UHF-and VHF- tuner with 5 V supply voltage.
AGC RF in C block C block G2 G1 S D RF out C block
94 9296
RFC VDD
Features
D D D D
Integrated gate protection diodes Low noise figure High gain Biasing network on chip
D Improved cross modulation at gain reduction D High AGC-range D SMD package
2
1
1
2
94 9279
13 579
94 9278
95 10831
3
4
4
3
S595T Marking: 595 Plastic case (SOT 143) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
S595TR Marking: 59R Plastic case (SOT 143R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
1
2
13 654
13 566
4
3
S595TRW Marking: W59 Plastic case (SOT 343R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
Document Number 85049 Rev. 4, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600 1 (9)
S595T/S595TR/S595TRW
Vishay Telefunken Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Gate 1/Gate 2 - source voltage Total power dissipation Channel temperature Storage temperature range Test Conditions Symbol Value VDS 8 ID 30 ±IG1/G2SM 10 ±VG1/G2SM 6 Ptot 200 TCh 150 Tstg –55 to +150 Unit V mA mA V mW °C °C
Tamb ≤ 60 °C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified Parameter Test Conditions Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthChA Value 450 Unit K/W
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified Parameter Gate 1 - source breakdown voltage Gate 2 - source breakdown voltage Gate 1 - source leakage current Gate 2 - source leakage current Drain current Self-biased operating current Gate 2 - source cut-off voltage Test Conditions ±IG1S = 10 mA, VG2S = VDS = 0 ±IG2S = 10 mA, VG1S = VDS = 0 +VG1S = 5 V, VG2S = VDS = 0 –VG1S = 5 V, VG2S = VDS = 0 ±VG2S = 5 V, VG1S = VDS = 0 VDS = 5 V, VG1S = 0, VG2S = 4 V VDS = 5 V, VG1S = nc, VG2S = 4 V VDS = 5 V, VG1S = nc, ID = 20 mA Symbol Min ±V(BR)G1SS 7 ±V(BR)G2SS +IG1SS –IG1SS ±IG2SS IDSS IDSP VG2S(OFF) 50 9 7 Typ Max Unit 10 V 10 50 100 20 500 18 V
mA mA
nA
mA
mA V
13 1.0
Caution for Gate 1 switch-off mode:
No external DC-voltage on Gate 1 in active mode! Switch-off at Gate 1 with VG1S < 0.7 V is feasible. Using open collector switching transistor (inside of PLL), insert 10 kW collector resistor.
www.vishay.de • FaxBack +1-408-970-5600 2 (9)
Document Number 85049 Rev. 4, 20-Jan-99
S595T/S595TR/S595TRW
Vishay Telefunken Electrical AC Characteristics
VDS = 5 V, VG2S = 4 V, f = 1 MHz , Tamb = 25_C, unless otherwise specified Parameter Forward transadmittance Gate 1 input capacitance Feedback capacitance Output capacitance Power g gain AGC range Noise figure g Test Conditions Symbol y21s Cissg1 Crss Coss Gps Gps DGps F F Min 28 Typ 30 2.3 25 1.1 28 21 1 1.3 Max Unit 35 mS 2.7 pF fF pF dB dB dB dB dB
GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3,3 mS, GL = 1 mS, f = 800 MHz VDS = 5 V, VG2S = 1 to 4 V, f = 800 MHz GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3,3 mS, GL = 1 mS, f = 800 MHz
17 45
Common Source S–Parameters
VDS = 5 V , VG2S = 4 V , Z0 = 50 W, Tamb = 25_C, unless otherwise specified S11 LOG ANG MAG dB deg –0.01 –4.6 –0.03 –9.2 –0.11 –13.8 –0.19 –18.1 –0.28 –22.6 –0.40 –26.8 –0.51 –31.1 –0.64 –35.2 –0.78 –39.3 –0.93 –43.2 –1.07 –47.1 –1.22 –50.8 –1.36 –54.4 –1.49 –58.2 –1.65 –61.5 –1.79 –65.2 –1.94 –68.6 –2.04 –72.0 –2.17 –75.3 –2.29 –78.7 –2.42 –82.2 –2.58 –85.2 –2.70 –88.4 –2.78 –91.6 –2.89 –94.8 –3.00 –97.7 S21 LOG ANG MAG dB deg 9.61 174.3 9.56 167.9 9.44 161.3 9.30 155.1 9.15 148.4 9.00 142.7 8.79 136.8 8.62 130.7 8.35 125.3 8.17 119.7 7.94 114.2 7.71 108.7 7.50 104.1 7.26 99.1 7.08 94.1 6.86 89.2 6.68 84.5 6.44 79.3 6.27 74.4 6.09 70.4 5.93 65.8 5.67 61.1 5.55 56.1 5.41 51.8 5.38 47.1 5.17 42.0 S12 LOG ANG MAG dB deg –63.13 88.0 –56.88 85.3 –53.46 82.8 –51.38 80.7 –49.76 78.3 –48.70 77.3 –47.92 76.4 –47.45 76.2 –47.23 76.7 –47.10 78.4 –47.22 82.3 –46.92 88.6 –46.68 92.6 –46.47 98.8 –46.45 107.2 –45.89 116.7 –44.77 125.9 –43.51 133.0 –41.91 137.1 –40.66 138.5 –39.81 140.6 –38.89 143.6 –37.91 145.8 –36.76 148.3 –35.65 149.7 –34.63 150.1 S22 LOG ANG MAG dB deg –0.08 –2.1 –0.10 –4.3 –0.14 –6.4 –0.16 –8.6 –0.22 –11.0 –0.26 –12.9 –0.30 –15.1 –0.38 –17.1 –0.43 –18.8 –0.49 –20.6 –0.55 –22.6 –0.60 –24.6 –0.66 –26.1 –0.70 –27.9 –0.73 –29.8 –0.78 –31.7 –0.80 –33.4 –0.85 –35.4 –0.87 –37.2 –0.89 –39.1 –0.90 –41.1 –0.92 –42.6 –0.93 –44.6 –0.94 –46.7 –0.93 –49.1 –0.92 –51.0
f/MHz 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300
Document Number 85049 Rev. 4, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600 3 (9)
S595T/S595TR/S595TRW
Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specified)
y21s – .