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S5277B

Toshiba Semiconductor

General Purposer Rectifier

S5277B,S5277G,S5277J,S5277N TOSHIBA Rectifier Silicon Diffused Type S5277B, S5277G, S5277J, S5277N General Purposer Rec...


Toshiba Semiconductor

S5277B

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Description
S5277B,S5277G,S5277J,S5277N TOSHIBA Rectifier Silicon Diffused Type S5277B, S5277G, S5277J, S5277N General Purposer Rectifier Applications Unit: mm Average Forward Current: IF (AV) = 1.0 A Repetitive Peak Reverse Voltage: VRRM = 100~1000 V · · Maximum Ratings (Ta = 25°C) Characteristics S5277B Repetitive peak reverse voltage S5277G S5277J S5277N Average forward current S5277B Peak one cycle surge forward current (non repetitive) S5277G S5277J S5277N Junction temparature Storage temparature range Tj Tstg IFSM IF (AV) VRRM Symbol Rating 100 400 600 1000 1.0 50 (50 Hz) 55 (60 Hz) 30 (50 Hz) 33 (60 Hz) -40~150 -40~150 °C °C A A V Unit JEDEC JEITA TOSHIBA ― ― 3-3C1A Weight: 0.3 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Peak forward voltage Repetitive peak reverse current Thermal resistance (junction to ambient) Symbol VFM IRRM Rth (j-a) Test Condition IFM = 1.0 A VRRM = Rated DC Min ¾ ¾ ¾ Typ. ¾ ¾ ¾ Max 1.2 10 120 Unit V mA °C/W Marking Type Code Lot No. Code Month of manufacture Year of manufacture Cathode Mark Color: Silver January to December are denoted by letter A to L respectively. Last decimal digit of the year of manufacture 77G 77B 77G 77J 77N Type S5277B S5277G S5277J S5277N 1 2002-08-29 S5277B,S5277G,S5277J,S5277N iF – vF 20 10 5 3 150°C 200 Ta max – IF (AV) Maximum allowable ambient temperature Ta max (°C) (A) iF 160 Instantaneous forward current Tj = 25°C 120 Resistive and inductive load 1 0.5 0.3 80 Capacitive load 40 0.1 ...




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