S50VB80

SHINDENGEN Bridge Diode Square In-line Package S50VB80 800V 50A OUTLINE DIMENSIONS Case : S50VB Unit : mm RATINGS ●　Absolute Maximum Ratings Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature VRM Maximum Reverse Voltage IO 50Hz sine wave, R-load, With heatsink, Tc=95℃ Average Rectified Forward Current IFSM 50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25℃ Peak Surge Forward Current I2t 1ms≦t＜10ms　Ｔc=25℃ Current Squared Time Vdis Terminals to case, AC 1 minute Dielectric Strength TOR （Recommended torque : 0.6N･m） Mounting Torque ●　Electrical Characteristics (Tc=25℃) Item Symbol Conditions VF IF=25A, Pulse measurement, Rating of per diode Forward Voltage IR VR=VRM, Pulse measurement, Rating of per diode Reverse Current Thermal Resistance θjc junction to case 　 Ratings Unit -40～150 ℃ 150 ℃ 800 V 50 A 500 A 800 A2ｓ 2 kV 0.8 N･m Ratings Unit Max.1.05 V Max.10 μA Max.0.5 ℃/W Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd S50VBx 100 Forward Voltage 10 Forward Current IF [A] Tc=150 °C [TYP] Tc=25 °C [TYP] 1 Pulse measurement per diode 0.1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Forward Voltage VF [V] S50VBx 160 140 Forward Power Dissipation Forward Power Dissipation PF [W] 120 100 80 60 40 20 0 SIN 0 10 20 30 40 50 60 70 80 Average Rectified Forward Current IO [A] Tj = Tjmax S50VBx 80 Derating Curve Average Rectified Forward Current IO [A] 70 60 50 40 30 20 10 0 SIN 0 20 40 60 80 100 120 140 160 ...